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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4511

Title: Evidence of temperature dependence of initial adsorption sites of Ge atoms on Si(111)-7x7
Authors: Ansari, Zubaida A.
Tomitori, Masahiko
Arai, Toyoko
Issue Date: 2006-04-25
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 88
Number: 17
Start page: 171902-1
End page: 171902-3
DOI: 10.1063/1.2198109
Abstract: Small amounts of Ge atoms are deposited on Si(111)-7×7 surfaces at room temperature (RT) and at 100 °C to clarify the initial adsorption sites using scanning tunneling microscopy. At RT Ge atoms are adsorbed at high coordination B_2 sites around the rest atoms, as predicted by Cho and Kaxiras [Surf. Sci. 396, L261 (1998)]. On one hand, at 100 °C Ge atoms are adsorbed on corner adatom sites. With increasing Ge coverage the corner sites are gradually occupied, followed by Ge adsorption at center adatom sites, resulting in Ge cluster growth with a size of the half unit cell.
Rights: Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z.A. Ansari, T. Arai and M. Tomitori, Applied Physics Letters, 88(17), 171902 (2006) and may be found at http://link.aip.org/link/?APPLAB/88/171902/1
URI: http://hdl.handle.net/10119/4511
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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