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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4512
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| タイトル: | Air-stable n-type carbon nanotube field-effect transistors with Si_3N_4 passivation films fabricated by catalytic chemical vapor deposition |
| 著者: | Kaminishi, Daisuke
Ozaki, Hirokazu
Ohno, Yasuhide
Maehashi, Kenzo
Inoue, Koichi
Matsumoto, Kazuhiko
Seri, Yasuhiro
Masuda, Atsushi
Matsumura, Hideki |
| 発行日: | 2005-03-11 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 86 |
| 号: | 11 |
| 開始ページ: | 113115-1 |
| 終了ページ: | 113115-3 |
| DOI: | 10.1063/1.1886898 |
| 抄録: | Air-stable n-type carbon nanotube field-effect transistors (CNTFETs) were fabricated, with Si_3N_4 passivation films formed by catalytic chemical vapor deposition (Cat-CVD). Electrical measurements reveal that the p-type characteristics of CNTFETs are converted to n-type after fabricating Si_3N_4 passivation films at 270 °C. This indicates that adsorbed oxygen on the CNT sidewalls was removed during the formation process of the Si_3N_4 passivation films. In addition, the source-drain current of the n-type CNTFETs does not change over time under vacuum, or in air. Consequently, the n-type CNTFETs are completely protected by the Si_3N_4 passivation film from further effects of ambient gases. Therefore, Cat-CVD is one of the best candidates to fabricate Si_3N_4 passivation films on CNTFETs. |
| Rights: | Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Daisuke KAMINISHI, Hirokazu OZAKI, Yasuhide OHNO, Kenzo MAEHASHI, Koishi INOUE, Kazuhiko MATSUMOTO, Yasuhiro SERI, Atsushi MASUDA, Hideki MATSUMURA, Applied Physics Letters, 86(11), 113115 (2005) and may be found at http://link.aip.org/link/?APPLAB/86/113115/1 |
| URI: | http://hdl.handle.net/10119/4512 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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