JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4515

Title: Relaxation processes of photoexcited carriers in GaAs/AlAs multiple quantum well structures grown by molecular beam epitaxy at low temperatures
Authors: Rath, M. C.
Araya, T.
Kumazaki, S.
Yoshihara, K.
Otsuka, N.
Issue Date: 2003-09-01
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 94
Number: 5
Start page: 3173
End page: 3180
DOI: 10.1063/1.1595142
Abstract: The relaxation processes of photoexcited carriers in GaAs/AlAs multiple quantum well structures grown at low temperatures by molecular beam epitaxy were studied by a tunable single-beam femtosecond pump-probe method. Concentrations of singularly ionized antisite arsenic ions, As^+_<Ga>, in the quantum wells, which were considered as traps of photoexcited carriers, were estimated from flux conditions and substrate temperatures in the growth. Transient transmittivity of the structures were measured by varying the pump-probe photon energy. The trapping rate of photoexcited carriers, which corresponded to the reciprocal of the carrier lifetime, was derived from the relaxation profile at the pump-probe photon energy close to the exciton resonant excitation energy for each structure. The trapping rate was found to increase linearly with As^+_<Ga> in a lower concentration range and superlinearly in a higher concentration range. Photoluminescence and absorption spectra were observed at room temperature and their correlation to the carrier lifetimes were investigated.
Rights: Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. C. Rath, T. Araya, S. Kumazaki, K. Yoshihara, and N. Otsuka, Journal of Applied Physics, 94(5), 3173-3180 (2003) and may be found at http://link.aip.org/link/?JAPIAU/94/3173/1
URI: http://hdl.handle.net/10119/4515
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
5168.pdf192KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology