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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/4515

タイトル: Relaxation processes of photoexcited carriers in GaAs/AlAs multiple quantum well structures grown by molecular beam epitaxy at low temperatures
著者: Rath, M. C.
Araya, T.
Kumazaki, S.
Yoshihara, K.
Otsuka, N.
発行日: 2003-09-01
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 94
号: 5
開始ページ: 3173
終了ページ: 3180
DOI: 10.1063/1.1595142
抄録: The relaxation processes of photoexcited carriers in GaAs/AlAs multiple quantum well structures grown at low temperatures by molecular beam epitaxy were studied by a tunable single-beam femtosecond pump-probe method. Concentrations of singularly ionized antisite arsenic ions, As^+_<Ga>, in the quantum wells, which were considered as traps of photoexcited carriers, were estimated from flux conditions and substrate temperatures in the growth. Transient transmittivity of the structures were measured by varying the pump-probe photon energy. The trapping rate of photoexcited carriers, which corresponded to the reciprocal of the carrier lifetime, was derived from the relaxation profile at the pump-probe photon energy close to the exciton resonant excitation energy for each structure. The trapping rate was found to increase linearly with As^+_<Ga> in a lower concentration range and superlinearly in a higher concentration range. Photoluminescence and absorption spectra were observed at room temperature and their correlation to the carrier lifetimes were investigated.
Rights: Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. C. Rath, T. Araya, S. Kumazaki, K. Yoshihara, and N. Otsuka, Journal of Applied Physics, 94(5), 3173-3180 (2003) and may be found at http://link.aip.org/link/?JAPIAU/94/3173/1
URI: http://hdl.handle.net/10119/4515
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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