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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4531

Title: Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten
Authors: Heya, Akira
Masuda, Atsushi
Matsumura, Hideki
Issue Date: 1999-04-12
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 74
Number: 15
Start page: 2143
End page: 2145
DOI: 10.1063/1.123782
Abstract: A method for crystallizing amorphous silicon (a-Si) films at low temperatures is proposed. In the method, a-Si films are crystallized at temperatures lower than 400 °C by annealing in the presence of atomic hydrogen. The hydrogen atoms are generated by catalytic cracking reaction of H_2 gas on a heated tungsten catalyzer in the catalytic chemical vapor deposition apparatus. It is found that the crystalline fraction of such an a-Si film is increased from 0% to several tens %, and at the same time the a-Si film itself is etched with the rate of several tens nm/min by annealing in atomic hydrogen. This increment of crystalline fraction appears dependent on the quality of initial a-Si films. It is implied that there are several types of a-Si even if the difference among a-Si films cannot be detected by Raman scattering spectroscopy and other means for measurements.
Rights: Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Akira Heya, Atsushi Masuda, Hideki Matsumura, Applied Physics Letters, 74(15), 2143-2145 (1999) and may be found at http://link.aip.org/link/?APPLAB/74/2143/1
URI: http://hdl.handle.net/10119/4531
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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