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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4536
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| タイトル: | Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition |
| 著者: | Niikura, Chisato
Masuda, Atsushi
Matsumura, Hideki |
| 発行日: | 1999-07-15 |
| 出版者: | American Institute of Physics |
| 誌名: | Journal of Applied Physics |
| 巻: | 86 |
| 号: | 2 |
| 開始ページ: | 985 |
| 終了ページ: | 990 |
| DOI: | 10.1063/1.370836 |
| 抄録: | Polycrystalline Si (poly-Si) films with high crystalline fraction and low dangling-bond density were prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD. Directional anisotropy in electrical conduction, probably due to structural anisotropy, was observed for Cat-CVD poly-Si films. A novel method to separately characterize both crystalline and amorphous phases in poly-Si films using anisotropic electrical conduction was proposed. On the basis of results obtained by the proposed method and electron spin resonance measurements, reduction in dangling-bond density for Cat-CVD poly-Si films was achieved using the condition to make the quality of the included amorphous phase high. The properties of Cat-CVD poly-Si films are found to be promising in solar-cell applications. |
| Rights: | Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Chisato Niikura, Atsushi Masuda, Hideki Matsumura, Journal of Applied Physics, 86(2), 985-990 (1999) and may be found at http://link.aip.org/link/?JAPIAU/86/985/1 |
| URI: | http://hdl.handle.net/10119/4536 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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