JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4536

Title: Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition
Authors: Niikura, Chisato
Masuda, Atsushi
Matsumura, Hideki
Issue Date: 1999-07-15
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 86
Number: 2
Start page: 985
End page: 990
DOI: 10.1063/1.370836
Abstract: Polycrystalline Si (poly-Si) films with high crystalline fraction and low dangling-bond density were prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD. Directional anisotropy in electrical conduction, probably due to structural anisotropy, was observed for Cat-CVD poly-Si films. A novel method to separately characterize both crystalline and amorphous phases in poly-Si films using anisotropic electrical conduction was proposed. On the basis of results obtained by the proposed method and electron spin resonance measurements, reduction in dangling-bond density for Cat-CVD poly-Si films was achieved using the condition to make the quality of the included amorphous phase high. The properties of Cat-CVD poly-Si films are found to be promising in solar-cell applications.
Rights: Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Chisato Niikura, Atsushi Masuda, Hideki Matsumura, Journal of Applied Physics, 86(2), 985-990 (1999) and may be found at http://link.aip.org/link/?JAPIAU/86/985/1
URI: http://hdl.handle.net/10119/4536
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
522.pdf541KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology