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タイトル: Effect of sputtering with hydrogen dilution on fluorine concentration of low hydrogen content fluorinated amorphous carbon thin films with low dielectric constant
著者: Yokomichi, Haruo
Masuda, Atsushi
発行日: 1999-09-01
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 86
号: 5
開始ページ: 2468
終了ページ: 2472
DOI: 10.1063/1.371078
抄録: The fluorine concentration of fluorinated amorphous carbon (a-C:F) thin films with a low dielectric constant was controlled using magnetron sputtering with hydrogen gas dilution into CF_4 gas. The structural, optical and defect properties of these films were investigated by infrared (IR) absorption, x-ray photoelectron spectroscopy, ultraviolet visual spectroscopy and electron spin resonance as well as dielectric constant measurements. IR absorption spectra of the films with various fluorine concentrations prepared by hydrogen gas dilution showed no vibration modes between hydrogen and carbon atoms in CH, CH_2, and CH_3 configurations, suggesting that the hydrogen concentration of these films is less than a few at. %. Furthermore, the structural properties change at a fluorine concentration of approximately 50 at. %. However, the dielectric constant of 2.5 that is required for the interlayer materials for the next generation of ultralarge scale integrated devices remains unchanged at this fluorine concentration. Based on these results, the thermal stability of these a-C:F films is discussed briefly.
Rights: Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Haruo Yokomichi, Atsushi Masuda, Journal of Applied Physics, 86(5), 2468-2472 (1999) and may be found at http://link.aip.org/link/?JAPIAU/86/2468/1
URI: http://hdl.handle.net/10119/4537
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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