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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4540

Title: Identification of Si and SiH in catalytic chemical vapor deposition of SiH_4 by laser induced fluorescence spectroscopy
Authors: Nozaki, Yoshitaka
Kongo, Koichi
Miyazaki, Toshihiko
Kitazoe, Makiko
Horii, Katsuhiko
Umemoto, Hironobu
Masuda, Atsushi
Matsumura, Hideki
Issue Date: 2000-11-01
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 88
Number: 9
Start page: 5437
End page: 5443
DOI: 10.1063/1.1314330
Abstract: Radical species produced in catalytic chemical vapor deposition (CVD), often called hot-wire CVD, processes were identified by using a laser induced fluorescence technique. Ground state Si atoms could be detected at low pressures where collisional processes in the gas phase could be ignored. The electronic temperature of Si atoms just after the formation on the catalyzer (tungsten) surfaces was 1320±490 K, when the catalyzer temperature was 2300 K. By the addition of 0.5 Pa of Ar, the electronic temperature was lowered down to 450±30 K. The absolute density of Si atoms was 3±1×10^9 cm^<-3> at 10 cm below the catalyzer when the flow rate and the pressure of SiH_4 were 0.5 sccm and 4 mPa, respectively. This density is just 0.3% of that of the parent SiH_4 molecules. However, since the decay rate of Si atoms is fast, it can be concluded that atomic silicon is one of the major products on the heated catalyzer surfaces. SiH radicals could also be detected, but the production rate of this species is two orders of magnitude less than that of Si atoms. It was also discovered that volatile SiH_4 molecules are produced by the atomic hydrogen attack on the amorphous silicon deposited on the chamber walls.
Rights: Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Yoshitaka Nozaki, Koichi Kongo, Toshihiko Miyazaki, Makiko Kitazoe, Katsuhiko Horii, Hironobu Umemoto, Atsushi Masuda and Hideki Matsumura, Journal of Applied Physics, 88(9), 5437-5443 (2000) and may be found at http://link.aip.org/link/?JAPIAU/88/5437/1
URI: http://hdl.handle.net/10119/4540
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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