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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4605

Title: Strong localization of carriers in δ-doped GaAs structures
Authors: Noh, J.P.
Shimogishi, F.
Otsuka, N.
Issue Date: 2003-02-10
Publisher: American Physical Society
Magazine name: Physical Review B
Volume: 67
Number: 7
Start page: 075309-1
End page: 075309-6
DOI: 10.1103/PhysRevB.67.075309
Abstract: Electrical conduction in Be δ-doped GaAs structures grown by molecular-beam epitaxy was studied in the temperature range from 10 to 350 K. A Be δ-doped layer and a 1-nm-thick GaAs spacer layer were grown at 520 °C, followed by growth of a 1-nm-thick GaAs layer with a high concentration of excess As and a 5-nm-thick nearly stoichiometric GaAs layer at a temperature close to 150 °C. At low Be doping concentrations, the conduction is n type and thermally activated, occurring in the 1-nm-thick low-temperature-grown GaAs layer. At higher Be doping concentrations, the conduction is p type and thermally activated, resulting from thermal excitation of localized holes to extended states in the δ-doped well. Activation energies for the p-type conduction range around 100 meV, indicating strong localization of holes in δ-doped wells. By further increasing the Be concentration, the activation energy decreases and eventually leads to the metal-like temperature dependence of the conduction at room temperature, suggesting a possible metal-insulator transition. High-temperature limits of the resistivity of insulating samples were found to be close to the value of the quantum unit of resistance, (1 / 2)h/e^2.
Rights: J. P. Noh, F. Shimogishi, N. Otsuka, Physical Review B, 67(7), 2003, 075309-1-075309-6. Copyright 2003 by the American Physical Society. http://link.aps.org/abstract/PRB/v67/e075309
URI: http://hdl.handle.net/10119/4605
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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