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c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4605
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| タイトル: | Strong localization of carriers in δ-doped GaAs structures |
| 著者: | Noh, J.P.
Shimogishi, F.
Otsuka, N. |
| 発行日: | 2003-02-10 |
| 出版者: | American Physical Society |
| 誌名: | Physical Review B |
| 巻: | 67 |
| 号: | 7 |
| 開始ページ: | 075309-1 |
| 終了ページ: | 075309-6 |
| DOI: | 10.1103/PhysRevB.67.075309 |
| 抄録: | Electrical conduction in Be δ-doped GaAs structures grown by molecular-beam epitaxy was studied in the temperature range from 10 to 350 K. A Be δ-doped layer and a 1-nm-thick GaAs spacer layer were grown at 520 °C, followed by growth of a 1-nm-thick GaAs layer with a high concentration of excess As and a 5-nm-thick nearly stoichiometric GaAs layer at a temperature close to 150 °C. At low Be doping concentrations, the conduction is n type and thermally activated, occurring in the 1-nm-thick low-temperature-grown GaAs layer. At higher Be doping concentrations, the conduction is p type and thermally activated, resulting from thermal excitation of localized holes to extended states in the δ-doped well. Activation energies for the p-type conduction range around 100 meV, indicating strong localization of holes in δ-doped wells. By further increasing the Be concentration, the activation energy decreases and eventually leads to the metal-like temperature dependence of the conduction at room temperature, suggesting a possible metal-insulator transition. High-temperature limits of the resistivity of insulating samples were found to be close to the value of the quantum unit of resistance, (1 / 2)h/e^2. |
| Rights: | J. P. Noh, F. Shimogishi, N. Otsuka, Physical Review B, 67(7), 2003, 075309-1-075309-6. Copyright 2003 by the American Physical Society. http://link.aps.org/abstract/PRB/v67/e075309 |
| URI: | http://hdl.handle.net/10119/4605 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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