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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4606

Title: Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSn
Authors: Takabatake, T.
Echizen, Y.
Yoshino, T.
Kobayashi, K.
Nakamoto, G.
Fujii, H.
Sera, M.
Issue Date: 1999-06-01
Publisher: American Physical Society
Magazine name: Physical Review B
Volume: 59
Number: 21
Start page: 13878
End page: 13881
DOI: 10.1103/PhysRevB.59.13878
Abstract: The effect of doping in CeNiSn has been studied by the measurements of electrical resistivity, Hall coefficient and magnetic susceptibility for single crystals of CeNi_<1-x>T_xSn (T=Co, Cu, and Pt) and Ce_<1-y>La_yNiSn (x,y=0.01 and 0.05). All these impurities are found to increase the residual resistivity by several times up to 1 mΩ cm for x or y=0.01, while for x or y=0.05 the resistivities along the orthorhombic b and c axes saturate to values smaller than those for 0.01. Furthermore, the low-temperature increase in the Hall mobility of CeNiSn was found to be strongly suppressed in a similar way by all the impurities. These results indicate that residual carriers in CeNiSn with an anisotropic gap are immobilized by any impurity substituted either in the 4f site or the non-4f site.
Rights: T. Takabatake, Y. Echizen, T. Yoshino, K. Kobayashi, G. Nakamoto, H. Fujii, and M. Sera, Physical Review B, 59(21), 1999, 13878-13881. Copyright 1999 by the American Physical Society. http://link.aps.org/abstract/PRB/v59/p13878
URI: http://hdl.handle.net/10119/4606
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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