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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/4607

タイトル: Electric conductance through chemical bonding states being formed between a Si tip and a Si(111)-(7x7) surface by bias-voltage noncontact atomic force spectroscopy
著者: Arai, T.
Tomitori, M.
発行日: 2006-02-13
出版者: American Physical Society
誌名: Physical Review B
巻: 73
号: 7
開始ページ: 073307-1
終了ページ: 073307-4
DOI: 10.1103/PhysRevB.73.073307
抄録: The change in electric conductance through bonding states being formed between a Si tip and a Si surface is examined by bias-voltage noncontact atomic force spectroscopy: current I and force interaction Δf (AFM cantilever resonance frequency shift) are simultaneously measured versus bias voltage V. A peak in I-V curves appears at close tip-sample separation over adatoms at the same V as a sharp peak in the Δf-V does. The peak possibly corresponds to channel formation through bonding states induced by changing V, leading to current saturation on tunnel barrier collapse with decreasing separation.
Rights: T. Arai and M. Tomitori, Physical Review B, 73(7), 2006, 073307-1-073307-4. Copyright 2006 by the American Physical Society. http://link.aps.org/abstract/PRB/v73/e073307
URI: http://hdl.handle.net/10119/4607
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)


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