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https://hdl.handle.net/10119/4607
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| Title: | Electric conductance through chemical bonding states being formed between a Si tip and a Si(111)-(7x7) surface by bias-voltage noncontact atomic force spectroscopy |
| Authors: | Arai, T.
Tomitori, M. |
| Issue Date: | 2006-02-13 |
| Publisher: | American Physical Society |
| Magazine name: | Physical Review B |
| Volume: | 73 |
| Number: | 7 |
| Start page: | 073307-1 |
| End page: | 073307-4 |
| DOI: | 10.1103/PhysRevB.73.073307 |
| Abstract: | The change in electric conductance through bonding states being formed between a Si tip and a Si surface is examined by bias-voltage noncontact atomic force spectroscopy: current I and force interaction Δf (AFM cantilever resonance frequency shift) are simultaneously measured versus bias voltage V. A peak in I-V curves appears at close tip-sample separation over adatoms at the same V as a sharp peak in the Δf-V does. The peak possibly corresponds to channel formation through bonding states induced by changing V, leading to current saturation on tunnel barrier collapse with decreasing separation. |
| Rights: | T. Arai and M. Tomitori, Physical Review B, 73(7), 2006, 073307-1-073307-4. Copyright 2006 by the American Physical Society. http://link.aps.org/abstract/PRB/v73/e073307 |
| URI: | https://hdl.handle.net/10119/4607 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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| 7266.pdf | | 479Kb | Adobe PDF | View/Open |
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