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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4609

Title: Anomalous Hall effect of metallic Be/Si pair δ-doped GaAs structures
Authors: Noh, J.P.
Iwasaki, S.
Jung, D. W.
Touhidul Islam, A. Z. M.
Otsuka, N.
Issue Date: 2007-05-04
Publisher: American Physical Society
Magazine name: Physical Review B
Volume: 75
Number: 19
Start page: 195307-1
End page: 195307-7
DOI: 10.1103/PhysRevB.75.195307
Abstract: Metallic samples of Be and Si pair δ-doped GaAs structures which undergo a metal-insulator transition with a decrease in the hole concentration are investigated by Hall resistance and magnetoresistance measurements. The anomalous Hall effect and negative magnetoresistance are observed from the samples in a temperature range above 70 K. Magnitudes of negative magnetoresistance and anomalous Hall resistance significantly vary among the samples, although their doping conditions are close to one another. Dependence of anomalous Hall resistance on the temperature and applied magnetic field is closely correlated to that of negative magnetoresistance for each sample. Their dependence is explained on the basis of a paramagnetic state of localized magnetic moments coexisting with itinerant holes in these samples. Both anomalous Hall effect and negative magnetoresistance decrease with lowering the temperature from 150 K and vanish at a temperature around 70 K, a possible origin of which is discussed.
Rights: J. P. Noh, S. Iwasaki, D. W. Jung, A. Z. M. Touhidul Islam, and N. Otsuka, Physical Review B, 75(19), 2007, 195307-1-195307-7. Copyright 2007 by the American Physical Society. http://link.aps.org/abstract/PRB/v75/e195307
URI: http://hdl.handle.net/10119/4609
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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