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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4728

Title: Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
Authors: KAWAMOTO, Naoya
MATSUO, Naoto
MASUDA, Atsushi
KITAMON, Yoshitaka
MATSUMURA, Hideki
HARADA, Yasunori
MIYOSHI, Tadaki
HAMADA, Hiroki
Keywords: polycrystalline Si
excimer laser annealing
hydrogen
secondary grain growth
stress relaxation
Cat-CVD
Issue Date: 2005-02-01
Publisher: 電子情報通信学会
Magazine name: IEICE TRANSACTIONS on Electronics
Volume: E88-C
Number: 2
Start page: 241
End page: 246
Abstract: The role of hydrogen in the Si film during excimer laser annealing (ELA) has been successfully studied by using a novel sample structure, which is stacked by a-Si film and SiN film. Hydrogen contents in the Si films during ELA are changed by preparing samples with hydrogen content of 2.3-8.2 at.% in the SiN films with a use of catalytic (Cat)-CVD method. For the low concentration of hydrogens in the Si film, the grain size increases by decreasing hydrogen concentration in the Si film, and the internal stress of the film decreases as increasing the shot number. For the high concentration of hydrogens in the Si film, hydrogen burst was observed at 500 mJ/cm^2 and the dependence of the internal stress on the shot number becomes weak even at 318 mJ/cm^2. These phenomena can be understood basically using the secondary grain growth mechanism, which we have proposed.
Rights: Copyright (C)2005 IEICE. Naoya Kawamoto, Naoto Matsuo, Atsushi Masuda, Yoshitaka Kitamon, Hideki Matsumura, Yasunori Harada, Tadaki Miyoshi Hiroki Hamada, IEICE TRANSACTIONS on Electronics, E88-C(2), 2005, 241-246. http://www.ieice.org/jpn/trans_online/
URI: http://hdl.handle.net/10119/4728
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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