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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4734
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| タイトル: | High-performance C_<60> thin-film field-effect transistors with parylene gate insulator |
| 著者: | Kubozono,Yoshihiro
Haas, Simon
Kalb, Wolfgang L.
Joris, Pierre
Meng, Fabian
Fujiwara, Akihiko
Batlogg, Bertram |
| 発行日: | 2008-07-25 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 93 |
| 号: | 3 |
| 開始ページ: | 033316-1 |
| 終了ページ: | 033316-3 |
| DOI: | 10.1063/1.2959819 |
| 抄録: | C_<60> field-effect transistors (FETs) have been fabricated with parylene gate dielectric on Si/SiO_2, on polyethylene terephthalate, and commercially available transparent sheet substrates. The best performance of the C_<60> FET device is achieved with parylene as gate dielectric: field-effect mobility of 0.41cm^2 V^<-1>s^<-1> and on-off ratio of ～10^7. The excellent FET characteristics are recorded without any annealing, and the devices were kept in He atmosphere after an exposure to air. This result suggests the parylene gate dielectric to be highly H_2O repellent. The mechanical flexibility and air-exposure effect were studied for the C_<60> FET with parylene gate dielectric. |
| Rights: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Kubozono, S. Haas, W. L. Kalb, P. Joris, F. Meng, A. Fujiwara, and B. Batlogg, Applied Physics Letters, 93(3), 033316 (2008) and may be found at http://link.aip.org/link/?APPLAB/93/033316/1 |
| URI: | http://hdl.handle.net/10119/4734 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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