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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4778

Title: Binding Energy of the Electron-Hole Liquid in Type-II (GaAs)_m/(AlAs)_m Quantum Wells
Authors: Inagaki, Akira
Katayama, Shin'ichi
Keywords: semiconductor
quantum wells
type-II structure
electron-hole liquid
binding energy
Issue Date: 2003
Publisher: 日本物理学会
Magazine name: Journal of the Physical Society of Japan
Volume: 72
Number: 6
Start page: 1452
End page: 1457
DOI: 10.1143/JPSJ.72.1452
Abstract: The binding energy of quasi-two-dimensional electron-hole liquid (EHL) at zero temperature is calculated for type-II (GaAs)_m/(AlAs)_m (5 ≤m ≤13) quantum wells (QWs). The correlation energy is evaluated by adopting a random phase approximation of Hubbard. For comparison, we calculate the binding energy of EHL for type-I (GaAs)_m/(AlAs)_m (14 ≤m ≤20) QWs. It is demonstrated that the EHL in type-II GaAs/AlAs QWs is more stable state than exciton and biexciton at high excitation density, while the EHL is unstable in type-I GaAs/AlAs QWs.AR10
Rights: This is the author's version of the work. It is posted here by permission of The Physical Society of Japan. Copyright (C) 2003 The Physical Society of Japan. Akira Inagaki and Shin'ichi Katayama, Journal of the Physical Society of Japan, 72(6), 2003, 1452-1457. http://jpsj.ipap.jp/link?JPSJ/72/1452/
URI: http://hdl.handle.net/10119/4778
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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