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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4780

Title: Theory of Intersubband Raman Laser in Modulation-doped Asymmetric Coupled Double Quantum Wells
Authors: Maung, S. M.
Katayama, S.
Keywords: intersubband Raman laser
electron-phonon interaction
modulation-doped asymmetric quantum wells
Issue Date: 2004
Publisher: 日本物理学会
Magazine name: Journal of the Physical Society of Japan
Volume: 73
Number: 9
Start page: 2562
End page: 2570
DOI: 10.1143/JPSJ.73.2562
Abstract: A microscopic theory is developed for the laser gain due to stimulated intersubband electronic Raman scattering pumped by CO_2 laser in modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells (ACDQWs). Based on the charge-density-excitation (CDE) mechanism, the formula for electronic Raman scattering cross-section is given, taking into account the coupling between intersubband plasmon and optical phonons including GaAs confined LO phonons and interface phonons. Stimulated Raman gain factor is then derived from the cross-section. The optimization of Raman gain, the gain saturation and threshold condition are also discussed. Numerical analysis for temporal variation of stimulated Stokes photon density, subband populations and output Raman laser power is carried out by using the self-consistent conventional rate equations. The theory can predict the presence or lack of coupled modes in lasing in agreement with the recent experimental results.
Rights: This is the author's version of the work. It is posted here by permission of The Physical Society of Japan. Copyright (C) 2004 The Physical Society of Japan. S. M. Maung and S. Katayama, Journal of the Physical Society of Japan, 73(9), 2004, 2562-2570. http://jpsj.ipap.jp/link?JPSJ/73/2562/
URI: http://hdl.handle.net/10119/4780
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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