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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4946

Title: Fabrication and characterization of field-effect transistor device with C_<2v> isomer of Pr@C_<82>
Authors: Nagano, Takayuki
Kuwahara, Eiji
Takayanagi, Toshio
Kubozono, Yoshihiro
Fujiwara, Akihiko
Issue Date: 2005-06-30
Publisher: Elsevier
Magazine name: Chemical Physics Letters
Volume: 409
Number: 4-6
Start page: 187
End page: 191
DOI: 10.1016/j.cplett.2005.05.019
Abstract: Endohedral metallofullerene field-effect transistor (FET) device was fabricated with thin films of C_<2v> isomer of Pr@C_<82>. This device showed n-channel normally-on type FET properties, where high bulk current of Pr@C_<82> was observed at gate voltage of 0 V. The mobility, μ, was estimated to be 1.5 x 10^<-4> cm^2 V^<-1> s^<-1> at 320 K, which is comparable to those of other endohedral metallofullerene FET devices. The normally-on properties have been found to originate from the high bulk current caused by the small energy gap of Pr@C_<82>.
Rights: NOTICE: This is the author’s version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structural formatting and other quality control mechanisms, may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Takayuki Nagano, Eiji Kuwahara, Toshio Takayanagi, Yoshihiro Kubozono and Akihiko Fujiwara, Chemical Physics Letters, 409(4-6), 2005, 187-191, http://dx.doi.org/10.1016/j.cplett.2005.05.019
URI: http://hdl.handle.net/10119/4946
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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