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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4955
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| タイトル: | Existence of localized spins in pair-delta doped GaAs structures |
| 著者: | Noh, J.P.
Idutsu, Y.
Otsuka, N. |
| キーワード: | 75.47.-m
A1. Doping
Low dimensional structures
Magnetic field
A3. Molecular beam epitaxy
B1. Gallium compounds
B2. Semiconducting gallium arsenide |
| 発行日: | 2007-04 |
| 出版者: | Elsevier |
| 誌名: | Journal of Crystal Growth |
| 巻: | 301-302 |
| 開始ページ: | 662 |
| 終了ページ: | 665 |
| DOI: | 10.1016/j.jcrysgro.2006.11.265 |
| 抄録: | The correlation between the negative magnetoresistance and concentration of localized holes in Be/Si pair delta-doped GaAs structures grown by molecular-beam epitaxy was investigated. The negative magnetoresistance was observed in a high temperature range. The magnitude of negative magnetoresistance is nearly proportional to the concentration of localized holes. The transition temperatures from the negative magnetoresistance to the positive one decrease with increasing the concentration of localized holes. The temperature-dependence of the Hall mobility is similar to that of negative magnetoresistance for each sample. The Hall resistance was measured in order to investigate possible ferromagnetic ordering of localized spins at low temperatures. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. J.P. Noh, Y. Idutsu and N. Otsuka, Journal of Crystal Growth, 301-302, 2007, 662-665, http://dx.doi.org/10.1016/j.jcrysgro.2006.11.265 |
| URI: | http://hdl.handle.net/10119/4955 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
サイズ | 形式 |
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| C8405.pdf | | 218Kb | Adobe PDF | 見る/開く |
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