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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4955

Title: Existence of localized spins in pair-delta doped GaAs structures
Authors: Noh, J.P.
Idutsu, Y.
Otsuka, N.
Keywords: 75.47.-m
A1. Doping
Low dimensional structures
Magnetic field
A3. Molecular beam epitaxy
B1. Gallium compounds
B2. Semiconducting gallium arsenide
Issue Date: 2007-04
Publisher: Elsevier
Magazine name: Journal of Crystal Growth
Volume: 301-302
Start page: 662
End page: 665
DOI: 10.1016/j.jcrysgro.2006.11.265
Abstract: The correlation between the negative magnetoresistance and concentration of localized holes in Be/Si pair delta-doped GaAs structures grown by molecular-beam epitaxy was investigated. The negative magnetoresistance was observed in a high temperature range. The magnitude of negative magnetoresistance is nearly proportional to the concentration of localized holes. The transition temperatures from the negative magnetoresistance to the positive one decrease with increasing the concentration of localized holes. The temperature-dependence of the Hall mobility is similar to that of negative magnetoresistance for each sample. The Hall resistance was measured in order to investigate possible ferromagnetic ordering of localized spins at low temperatures.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. J.P. Noh, Y. Idutsu and N. Otsuka, Journal of Crystal Growth, 301-302, 2007, 662-665, http://dx.doi.org/10.1016/j.jcrysgro.2006.11.265
URI: http://hdl.handle.net/10119/4955
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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