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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4958
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| タイトル: | Germanium nanostructures on silicon observed by scanning probe microscopy |
| 著者: | Tomitori, Masahiko
Arai, Toyoko |
| キーワード: | AFM
atomic force microscopy
crystal growth
elemental semiconductors
germanium
nanostructures
scanning probe microscopy
scanning tunneling microscopy
silicon
SPM
STM |
| 発行日: | 2004-07 |
| 出版者: | Materials Research Society |
| 誌名: | MRS Bulletin |
| 巻: | 29 |
| 号: | 7 |
| 開始ページ: | 484 |
| 終了ページ: | 487 |
| 抄録: | Scanning tunneling microscopy and noncontact atomic force microscopy have been used to observe germanium growth on Si(001) and Si(111). The atomically resolved images provide invaluable information on heteroepitaxial film growth from the viewpoints of both industrial application and basic science. We briefly review the history of characterizing heteroepitaxial elemental semiconductor systems by means of scanning probe microscopy (SPM), where the Stranski–Krastanov growth mode can be observed on the atomic scale: the detailed phase transition from layer-by-layer growth to three-dimensional cluster growth was elucidated by the use of SPM. In addition, we comment on the potential of SPM for examining the spectroscopic aspects of heteroepitaxial film growth, through the use of SPM tips with well-defined facets. |
| Rights: | Copyright (C) 2004 Materials Research Society. It is posted here by permission of the Materials Research Society. Masahiko Tomitori and Toyoko Arai, MRS Bulletin, 29(7), 2004, 484-487. http://www.mrs.org/ |
| URI: | http://hdl.handle.net/10119/4958 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
サイズ | 形式 |
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| B3890.pdf | | 1987Kb | Adobe PDF | 見る/開く |
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