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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/4958

タイトル: Germanium nanostructures on silicon observed by scanning probe microscopy
著者: Tomitori, Masahiko
Arai, Toyoko
キーワード: AFM
atomic force microscopy
crystal growth
elemental semiconductors
scanning probe microscopy
scanning tunneling microscopy
発行日: 2004-07
出版者: Materials Research Society
誌名: MRS Bulletin
巻: 29
号: 7
開始ページ: 484
終了ページ: 487
抄録: Scanning tunneling microscopy and noncontact atomic force microscopy have been used to observe germanium growth on Si(001) and Si(111). The atomically resolved images provide invaluable information on heteroepitaxial film growth from the viewpoints of both industrial application and basic science. We briefly review the history of characterizing heteroepitaxial elemental semiconductor systems by means of scanning probe microscopy (SPM), where the Stranski–Krastanov growth mode can be observed on the atomic scale: the detailed phase transition from layer-by-layer growth to three-dimensional cluster growth was elucidated by the use of SPM. In addition, we comment on the potential of SPM for examining the spectroscopic aspects of heteroepitaxial film growth, through the use of SPM tips with well-defined facets.
Rights: Copyright (C) 2004 Materials Research Society. It is posted here by permission of the Materials Research Society. Masahiko Tomitori and Toyoko Arai, MRS Bulletin, 29(7), 2004, 484-487. http://www.mrs.org/
URI: http://hdl.handle.net/10119/4958
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)


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