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| Title: | Electric-field effects on intersubband Raman laser gain in modulation-doped GaAs/AlGaAs coupled double quantum wells |
| Authors: | Miura, Makoto
Katayama, Shin'ichi |
| Keywords: | Intersubband Raman laser
Asymmetric coupled double quantum wells |
| Issue Date: | 2006-04 |
| Publisher: | Elsevier |
| Magazine name: | Science and Technology of Advanced Materials |
| Volume: | 7 |
| Number: | 3 |
| Start page: | 286 |
| End page: | 289 |
| DOI: | 10.1016/j.stam.2006.02.001 |
| Abstract: | We study numerically the electric-field effects on optically pumped mid-infrared intersubband Raman lasers (IRL) consisting of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells. The collective plasmon nature of intersubband excitations is important to analyze the characteristics of IRL gain. The lasing wavelength is changed from 15.0 to 12.5 μm by increasing applied bias from −40 to 10 kV/cm for pumping wavelength 9.56 μm with intensity 250 kW/cm^2 if the maximum gain at threshold (G^<max>_<R_<th>>=α/Γ_<opt>) was assumed to be 100 cm^<-1>,αand Γ_<opt> being total radiation loss and optical confinement factor, respectively. |
| Rights: | NOTICE: This is the author’s version of a work accepted for publication by Elsevier.
Changes resulting from the publishing process, including peer review, editing, corrections,
structural formatting and other quality control mechanisms, may not be reflected in this
document. Changes may have been made to this work since it was submitted for publication.
A definitive version was subsequently published in Makoto Miura and Shin'ichi Katayama, Science and Technology of Advanced Materials, 7(3), 2006, 286-289, http://dx.doi.org/10.1016/j.stam.2006.02.001 |
| URI: | http://hdl.handle.net/10119/4972 |
| Material Type: | author |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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