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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4972

Title: Electric-field effects on intersubband Raman laser gain in modulation-doped GaAs/AlGaAs coupled double quantum wells
Authors: Miura, Makoto
Katayama, Shin'ichi
Keywords: Intersubband Raman laser
Asymmetric coupled double quantum wells
Issue Date: 2006-04
Publisher: Elsevier
Magazine name: Science and Technology of Advanced Materials
Volume: 7
Number: 3
Start page: 286
End page: 289
DOI: 10.1016/j.stam.2006.02.001
Abstract: We study numerically the electric-field effects on optically pumped mid-infrared intersubband Raman lasers (IRL) consisting of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells. The collective plasmon nature of intersubband excitations is important to analyze the characteristics of IRL gain. The lasing wavelength is changed from 15.0 to 12.5 μm by increasing applied bias from −40 to 10 kV/cm for pumping wavelength 9.56 μm with intensity 250 kW/cm^2 if the maximum gain at threshold (G^<max>_<R_<th>>=α/Γ_<opt>) was assumed to be 100 cm^<-1>,αand Γ_<opt> being total radiation loss and optical confinement factor, respectively.
Rights: NOTICE: This is the author’s version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structural formatting and other quality control mechanisms, may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Makoto Miura and Shin'ichi Katayama, Science and Technology of Advanced Materials, 7(3), 2006, 286-289, http://dx.doi.org/10.1016/j.stam.2006.02.001
URI: http://hdl.handle.net/10119/4972
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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