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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/7783
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| タイトル: | Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers |
| 著者: | Matsushima, Toshinori
Kinoshita, Yoshiki
Murata, Hideyuki |
| 発行日: | 2007-11-17 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 91 |
| 号: | 25 |
| 開始ページ: | 253504-1 |
| 終了ページ: | 253504-3 |
| DOI: | 10.1063/1.2825275 |
| 抄録: | Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N´-diphenyl-N,N´-bis(1-naphthyl)-1,1´-biphenyl-4,4´-diamine (α-NPD) layers were measured with various thicknesses of a molybdenum trioxide (MoO_3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO_3 layer forms Ohmic hole injection at the ITO/MoO_3/α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to an electron transfer from ITO and α-NPD to MoO_3. |
| Rights: | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Toshinori Matsushima, Yoshiki Kinoshita, and Hideyuki Murata, Applied Physics Letters, 91(25), 253504 (2007) and may be found at http://link.aip.org/link/?APPLAB/91/253504/1 |
| URI: | http://hdl.handle.net/10119/7783 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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| A12178.pdf | | 278Kb | Adobe PDF | 見る/開く |
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