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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/7864

Title: Two Phase Spin Reversal Process in Co/Si/Co Trilayer Grown on GaAs(001)
Authors: Islam, J.
Yamamoto, Y.
Shikoh, E.
Fujiwara, A.
Hori, H.
Keywords: Antiparallel spin state
Ferromagnet-semiconductor multilayer
Co/Si/Co trilayer
Spin reversal
Two-phase hysteresis loop
Issue Date: 2007
Publisher: EuroJournals Publishing, Inc.
Magazine name: European Journal of Scientific Research
Volume: 18
Number: 1
Start page: 45
End page: 54
Abstract: Three times larger coercivity of Co/GaAs(001) bilayer compared to that of Co/Si(001) led us to fabricate a multilayer of Co/Si/Co/GaAs(001). The magnetization process of the multilayer was studied as a function of the thickness of the Si spacer layer. The coercivity of top Co layer on Si was found to get decreased with the increase in the thickness of Si spacer layer. Perpendicular resistance of the multilayer was also increased with increasing Si spacer layer thickness. We suggest that localized electronics defect states in the gap of amorphous Si modulate the magnetic properties of the multilayer. Hysteresis loop was changed from two phase to single phase with decreasing temperature and Si spacer layer thickness. The nice correspondence between the magnetoresistance peak and the flat-field region found in the magnetization curves provided the direct evidence of the existence of antiparallel spin states in the two Co layers through the Si spacer in Co/Si/Co/GaAs(001) multilayer.
Rights: Copyright (C) 2007 EuroJournals Publishing, Inc.. J. Islam, Y. Yamamoto, E. Shikoh, A. Fujiwara and H. Hori, European Journal of Scientific Research, 18(1), 2007, 45-54.
URI: http://hdl.handle.net/10119/7864
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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