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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/7892

タイトル: Low-flux elucidation of initial growth of Ge clusters deposited on Si(111)-7×7 observed by scanning tunneling microscopy
著者: Ansari, Z. A.
Arai, T.
Tomitori, M.
発行日: 2009
出版者: American Physical Society
誌名: Physical Review B
巻: 79
号: 3
開始ページ: 033302-1
終了ページ: 033302-4
DOI: 10.1103/PhysRevB.79.033302
抄録: Deposition of Ge on Si(111)-7×7 under very low Ge flux is examined using ultrahigh vacuum scanning tunneling microscopy; Ge atoms are deposited at 150 °C under a flux of ~0.005 or 0.05 ML/min. Initially Ge atoms are substituted for Si atoms on corner adatom sites of faulted half unit cells. At a Ge coverage of 0.08 ML under the lower flux, hollow-centered hexagonal Ge clusters with six protrusions are formed preferentially on faulted half unit cells, which are uniform and separated from other clusters. At the higher flux various types of clusters grow, frequently neighboring with others. This indicates that the low flux is needed to elucidate the stable type of Ge clusters grown on Si(111)-7×7.
Rights: Z. A. Ansari, T. Arai, and M. Tomitori, Physical Review B, 79(3), 2009, 033302-1-033302-4. Copyright 2009 by the American Physical Society. http://link.aps.org/doi/10.1103/PhysRevB.79.033302
URI: http://hdl.handle.net/10119/7892
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)


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