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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/7892

Title: Low-flux elucidation of initial growth of Ge clusters deposited on Si(111)-7×7 observed by scanning tunneling microscopy
Authors: Ansari, Z. A.
Arai, T.
Tomitori, M.
Issue Date: 2009
Publisher: American Physical Society
Magazine name: Physical Review B
Volume: 79
Number: 3
Start page: 033302-1
End page: 033302-4
DOI: 10.1103/PhysRevB.79.033302
Abstract: Deposition of Ge on Si(111)-7×7 under very low Ge flux is examined using ultrahigh vacuum scanning tunneling microscopy; Ge atoms are deposited at 150 °C under a flux of ~0.005 or 0.05 ML/min. Initially Ge atoms are substituted for Si atoms on corner adatom sites of faulted half unit cells. At a Ge coverage of 0.08 ML under the lower flux, hollow-centered hexagonal Ge clusters with six protrusions are formed preferentially on faulted half unit cells, which are uniform and separated from other clusters. At the higher flux various types of clusters grow, frequently neighboring with others. This indicates that the low flux is needed to elucidate the stable type of Ge clusters grown on Si(111)-7×7.
Rights: Z. A. Ansari, T. Arai, and M. Tomitori, Physical Review B, 79(3), 2009, 033302-1-033302-4. Copyright 2009 by the American Physical Society. http://link.aps.org/doi/10.1103/PhysRevB.79.033302
URI: http://hdl.handle.net/10119/7892
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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