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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8533

Title: Independent control of open-circuit voltage of organic solar cells by changing film thickness of MoO_3 buffer layer
Authors: Kinoshita, Yoshiki
Takenaka, Rie
Murata, Hideyuki
Issue Date: 2008-06-20
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 92
Number: 24
Start page: 243309-1
End page: 243309-3
DOI: 10.1063/1.2949321
Abstract: The authors report the systematic control of V_<oc> as a function of the film thickness of molybdenum trioxide (MoO_3) buffer layer in the organic solar cells. The open-circuit voltage (V_<oc>) increased from 0.57 to 0.97 V as the thickness of MoO3 film is increased from 0 to 50 nm in the device structure of indium-tin-oxide (ITO)/MoO_3 (x nm)/tetraphenylporphine (10 nm)/C_<60> (40 nm)/bathocuproine (10 nm)/Ag (100 nm). The values between V_<oc> and the ionization potential (I_p) of MoO_3 (x nm) on ITO exhibit linear relationship, where the I_p values change from 4.92 to 5.92 eV as they increase from 0 to 50 nm. The enhancement of V_<oc> was achieved without affecting short-circuit current density and fill factor. Consequently, the power conversion efficiency of the device increases from 1.24% to 1.88% primarily due to the increase in V_<oc>.
Rights: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Yoshiki Kinoshita, Rie Takenaka, Hideyuki Murata, Applied Physics Letters, 92(24), 243309 (2008) and may be found at http://link.aip.org/link/?APPLAB/92/243309/1
URI: http://hdl.handle.net/10119/8533
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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