JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >

このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/8535

タイトル: Marked improvement in electroluminescence characteristics of organic light-emitting diodes using an ultrathin hole-injection layer of molybdenum oxide
著者: Matsushima, Toshinori
Jin, Guang-He
Murata, Hideyuki
発行日: 2008-09-02
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 104
号: 5
開始ページ: 054501-1
終了ページ: 054501-6
DOI: 10.1063/1.2974089
抄録: We show that the performance of organic light-emitting diodes (OLEDs) is markedly improved by optimizing the thickness of a hole-injection layer (HIL) of molybdenum oxide (MoO_3) inserted between indium tin oxide and N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (α-NPD). From results of the electroluminescence (EL) characteristics of OLEDs with various thicknesses of a MoO_3 HIL, we found that the OLED with a 0.75-nm-thick MoO_3 HIL had the lowest driving voltage and the highest power conversion efficiency among the OLEDs. Moreover, the operational lifetime of the OLED was improved by about a factor of 6 by using the 0.75-nm-thick MoO_3 HIL. These enhanced EL characteristics are attributable to the formation of an Ohmic contact at the interfaces composed of ITO/MoO_3/α-NPD.
Rights: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Toshinori Matsushima, Guang-He Jin, Hideyuki Murata, Journal of Applied Physics, 104(5), 054501 (2008) and may be found at http://link.aip.org/link/?JAPIAU/104/054501/1
URI: http://hdl.handle.net/10119/8535
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

このアイテムのファイル:

ファイル 記述 サイズ形式
12741.pdf759KbAdobe PDF見る/開く

当システムに保管されているアイテムはすべて著作権により保護されています。

 


お問い合わせ先 : 北陸先端科学技術大学院大学 研究推進課図書館情報係