|
JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/8539
|
| タイトル: | Large anomalous Hall resistance of pair δ-doped GaAs structures grown by molecular-beam epitaxy |
| 著者: | Jung, D. W.
Noh, J. P.
Touhidul Islam, A. Z. M.
Otsuka, N. |
| 発行日: | 2008-02-19 |
| 出版者: | American Institute of Physics |
| 誌名: | Journal of Applied Physics |
| 巻: | 103 |
| 号: | 4 |
| 開始ページ: | 043703-1 |
| 終了ページ: | 043703-8 |
| DOI: | 10.1063/1.2838487 |
| 抄録: | Beryllium/silicon pair δ-doped GaAs structures grown by molecular-beam epitaxy exhibit a Hall resistance which has a nonlinear dependence on the applied magnetic field and which is strongly correlated to the negative magnetoresistance observed under the applied magnetic field parallel to the δ-doped layers. Dependence of the occurrence of the nonlinear Hall resistance on the growth condition is investigated. A significantly large increase in both the magnitude and the nonlinearity of the Hall resistance is observed from samples whose GaAs buffer layers are grown under the condition of a low As/Ga flux ratio. Reflection high energy electron diffraction and electron microscope observations show that a faceted surface develops with the growth and postgrowth annealing of a GaAs buffer layer under the condition of a low As flux. From samples which have only Si δ-doped layers and exhibit the n-type conduction, such nonlinear Hall resistance is not observed. The nonlinearity of the Hall resistance of Be/Si pair δ-doped structures depends on the single parameter B/T, where B and T are the applied magnetic field and the temperature, respectively. Based on these results, it is suggested that the nonlinear Hall resistance of Be/Si pair δ-doped structures is the anomalous Hall effect caused by localized spins in δ-doped layers. |
| Rights: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. W. Jung, J. P. Noh, A. Z. M. Touhidul Islam, N. Otsuka, Journal of Applied Physics, 103(4), 043703 (2008) and may be found at http://link.aip.org/link/?JAPIAU/103/043703/1 |
| URI: | http://hdl.handle.net/10119/8539 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
| ファイル |
記述 |
サイズ | 形式 |
|---|
| 13433.pdf | | 250Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|
