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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8539

Title: Large anomalous Hall resistance of pair δ-doped GaAs structures grown by molecular-beam epitaxy
Authors: Jung, D. W.
Noh, J. P.
Touhidul Islam, A. Z. M.
Otsuka, N.
Issue Date: 2008-02-19
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 103
Number: 4
Start page: 043703-1
End page: 043703-8
DOI: 10.1063/1.2838487
Abstract: Beryllium/silicon pair δ-doped GaAs structures grown by molecular-beam epitaxy exhibit a Hall resistance which has a nonlinear dependence on the applied magnetic field and which is strongly correlated to the negative magnetoresistance observed under the applied magnetic field parallel to the δ-doped layers. Dependence of the occurrence of the nonlinear Hall resistance on the growth condition is investigated. A significantly large increase in both the magnitude and the nonlinearity of the Hall resistance is observed from samples whose GaAs buffer layers are grown under the condition of a low As/Ga flux ratio. Reflection high energy electron diffraction and electron microscope observations show that a faceted surface develops with the growth and postgrowth annealing of a GaAs buffer layer under the condition of a low As flux. From samples which have only Si δ-doped layers and exhibit the n-type conduction, such nonlinear Hall resistance is not observed. The nonlinearity of the Hall resistance of Be/Si pair δ-doped structures depends on the single parameter B/T, where B and T are the applied magnetic field and the temperature, respectively. Based on these results, it is suggested that the nonlinear Hall resistance of Be/Si pair δ-doped structures is the anomalous Hall effect caused by localized spins in δ-doped layers.
Rights: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. W. Jung, J. P. Noh, A. Z. M. Touhidul Islam, N. Otsuka, Journal of Applied Physics, 103(4), 043703 (2008) and may be found at http://link.aip.org/link/?JAPIAU/103/043703/1
URI: http://hdl.handle.net/10119/8539
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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