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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/8824
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| タイトル: | Temperature-independent electron tunneling injection in tris (8-hydroxyquinoline) aluminum thin film from high-work-function gold electrode |
| 著者: | Matsushima, Toshinori
Adachia, Chihaya |
| キーワード: | Tris (8-hydroxyquinoline) aluminum
Organic light-emitting diode
Gold electrode
Current density–voltage characteristics
Carrier tunneling injection
Current flow mechanism |
| 発行日: | 2008-06 |
| 出版者: | Elsevier |
| 誌名: | Thin Solid Films |
| 巻: | 516 |
| 号: | 15 |
| 開始ページ: | 5069 |
| 終了ページ: | 5074 |
| DOI: | 10.1016/j.tsf.2008.02.012 |
| 抄録: | We fabricated electron-only tris (8-hydroxyquinoline) aluminum (Alq_3) single-layer devices with a device structure of glass substrate/MgAg anode (100 nm)/Alq_3 layer (100 nm)/metal cathode (100 nm), and systematically varied the work functions (WF) of the metal cathodes from WF = - 1.9 (Cs) to - 2.9 (Ca), - 3.8 (Mg), − 4.4 (Al), − 4.6 (Ag), and − 5.2 eV (Au) to investigate how electron injection barriers at the cathode/Alq_3 interfaces influence their current density–voltage (J–V) characteristics. We found that current densities at a certain driving voltage decrease and the temperature dependence of J–V characteristics of the devices gradually becomes weaker as the work functions of the metal cathodes are decreased. The device with the highest-work-function Au cathode exhibited virtually temperature-independent J–V characteristics, suggesting that a current flow mechanism of this device is mainly controlled by electron tunneling injection at the Au/Alq_3 interface. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Toshinori Matsushima and Chihaya Adachi, Thin Solid Films, 516(15), 2008, 5069-5074, http://dx.doi.org/10.1016/j.tsf.2008.02.012 |
| URI: | http://hdl.handle.net/10119/8824 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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