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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/8825

タイトル: Enhancing hole transports and generating hole traps by doping organic hole transport layers with p-type molecules of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane
著者: Matsushima, Toshinori
Adachi, Chihaya
キーワード: Hole transport
Hole trap
p-doped organic hole-transport layer
Thermally stimulated current
Field-effect transistor
発行日: 2008-11-28
出版者: Elsevier
誌名: Thin Solid Films
巻: 517
号: 2
開始ページ: 874
終了ページ: 877
DOI: 10.1016/j.tsf.2008.07.008
抄録: We investigated the relationship between the hole-transport and hole-trap characteristics of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) doped with p-type molecules of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F_4-TCNQ) at various concentrations. The results of our current density–voltage, field-effect transistor, and thermally stimulated current studies revealed that the current densities of hole-only α-NPD devices at a certain driving voltage increased in the F_4-TCNQ concentration region between 0 mol% and 3 mol% due to the generation of free holes while the hole mobilities of the α-NPD layers decreased due to an increase in hole-trap concentration and deepened hole-trap energy levels, which were caused by the F_4-TCNQ doping. The optimized doping concentration of F_4-TCNQ was 3 mol%, which provided the highest current density for the hole-only device. On the other hand, since the increase in free-hole concentration was overcome by the decrease in hole mobility, the current density of the hole-only device decreased at the F_4-TCNQ concentration of 4 mol% when compared with the optimized concentration.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Toshinori Matsushima and Chihaya Adachi, Thin Solid Films, 517(2), 2008, 874-877, http://dx.doi.org/10.1016/j.tsf.2008.07.008
URI: http://hdl.handle.net/10119/8825
資料タイプ: author
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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