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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/9164
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| タイトル: | Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas |
| 著者: | Horita, Susumu
Toriyabe, Koichi
Nishioka, Kensuke |
| 発行日: | 2009-03-23 |
| 出版者: | The Japan Society of Applied Physics |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 48 |
| 号: | 3 |
| 開始ページ: | 035502-1 |
| 終了ページ: | 035502-7 |
| DOI: | 10.1143/JJAP.48.035502 |
| 抄録: | Using the chemical reaction between silicone oil vapor and ozone gas at atmospheric pressure and above 200 °C, we deposited a Si oxide film. Fourier transformer infrared (FT-IR) spectra of the films were very similar to those of thermal SiO_2 films without peaks due to carbon for deposition temperatures T_s from 200 to 350 °C. Although a small peak due to the Si–OH bond appeared for T_s ≤300 °C, it was reduced with increasing T_s and almost disappeared around 350 °C. Secondary ion mass spectrometry measurements showed that the concentrations of metal and carbon impurities were at a negligible level for device performance even for T_s = 200 °C. The dielectric property of the film deposited at 350 °C was also shown to be comparable to the SiO_x film produced by a conventional low-temperature deposition method, although the estimated density of interface trap was in the order of 10^<11>/(cm^2·eV). |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2009 The Japan Society of Applied Physics. Susumu Horita, Koichi Toriyabe, and Kensuke Nishioka, Japanese Journal of Applied Physics, 48(3), 2009, 035502. http://jjap.ipap.jp/link?JJAP/48/035502/ |
| URI: | http://hdl.handle.net/10119/9164 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
サイズ | 形式 |
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| 08JJAPRP080745SiOx.pdf | | 347Kb | Adobe PDF | 見る/開く |
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