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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9165

Title: Low Temperature Deposition and Crystallization of Silicon Film on an HF-Etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution
Authors: Horita, Susumu
Sukreen, Hana
Issue Date: 2009-03-27
Publisher: The Japan Society of Applied Physics
Magazine name: Applied Physics Express
Volume: 2
Number: 4
Start page: 041201-1
End page: 041201-3
DOI: 10.1143/APEX.2.041201
Abstract: As an induction layer for Si crystallization, an yttria-stabilized zirconia (YSZ) film was deposited on a glass substrate. The YSZ layer, already etched with HF and rinsed with ethanol, was heated to 430 °C. The Si film deposited on it was partially crystallized. This was confirmed by transmission electron microscope. The crystallization fraction was greater than that on a YSZ layer rinsed by deionized water. Without using YSZ layer, deposited Si film was amorphous. F atoms in HF-etching solution were adsorbed on the YSZ layer and remained even after the ethanol rinse. These remaining F may be important for crystallization.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2009 The Japan Society of Applied Physics. Susumu Horita and Hana Sukreen, Applied Physics Express, 2(4), 2009, 041201. http://apex.ipap.jp/link?APEX/2/041201/
URI: http://hdl.handle.net/10119/9165
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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