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https://hdl.handle.net/10119/9165
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| Title: | Low Temperature Deposition and Crystallization of Silicon Film on an HF-Etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution |
| Authors: | Horita, Susumu
Sukreen, Hana |
| Issue Date: | 2009-03-27 |
| Publisher: | The Japan Society of Applied Physics |
| Magazine name: | Applied Physics Express |
| Volume: | 2 |
| Number: | 4 |
| Start page: | 041201-1 |
| End page: | 041201-3 |
| DOI: | 10.1143/APEX.2.041201 |
| Abstract: | As an induction layer for Si crystallization, an yttria-stabilized zirconia (YSZ) film was deposited on a glass substrate. The YSZ layer, already etched with HF and rinsed with ethanol, was heated to 430 °C. The Si film deposited on it was partially crystallized. This was confirmed by transmission electron microscope. The crystallization fraction was greater than that on a YSZ layer rinsed by deionized water. Without using YSZ layer, deposited Si film was amorphous. F atoms in HF-etching solution were adsorbed on the YSZ layer and remained even after the ethanol rinse. These remaining F may be important for crystallization. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2009 The Japan Society of Applied Physics. Susumu Horita and Hana Sukreen, Applied Physics Express, 2(4), 2009, 041201. http://apex.ipap.jp/link?APEX/2/041201/ |
| URI: | https://hdl.handle.net/10119/9165 |
| Material Type: | author |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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Files in This Item:
| File |
Description |
Size | Format |
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| AP090016YSZ-Si.pdf | | 188Kb | Adobe PDF | View/Open |
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