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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9196

Title: Tuning of threshold voltage of organic field-effect transistors by space charge polarization
Authors: Sakai, Heisuke
Konno, Koudai
Murata, Hideyuki
Issue Date: 2009-02-18
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 94
Number: 7
Start page: 073304-1
End page: 073304-3
DOI: 10.1063/1.3086277
Abstract: We demonstrate a tunable threshold voltage in an organic field-effect transistor (OFET) using an ion-dispersed gate dielectric. By applying an external electric field (V_<ex>) to the gate dielectrics, the dispersed ions in the gate dielectric are separated by electrophoresis and form space charge polarization. The drain current of the OFET increases more than 1.9 times, and the threshold voltage (V_<th>) decreases by 22 V (from −35.1 to −13.1 V). The direction and the magnitude of V_<th> shift are tunable with the applied V_<ex>. The origin of the V_<th> shift is attributed to the polarization of the gate dielectric.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Heisuke Sakai, Koudai Konno and Hideyuki Murata, Applied Physics Letters, 94(7), 073304 (2009) and may be found at http://link.aip.org/link/APPLAB/v94/i7/p073304/s1
URI: http://hdl.handle.net/10119/9196
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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