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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/9218
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| タイトル: | Low-Temperature Crystallization of Silicon Films Directly Deposited on Glass Substrates Covered with Yttria-Stabilized Zirconia Layers |
| 著者: | Horita, Susumu
Hana, Sukreen |
| 発行日: | 2010-10-20 |
| 出版者: | The Japan Society of Applied Physics |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 49 |
| 号: | 10 |
| 開始ページ: | 105801-1 |
| 終了ページ: | 105801-11 |
| DOI: | 10.1143/JJAP.49.105801 |
| 抄録: | Si films were deposited at low temperatures on glass substrates covered with poly-yttria-stabilized zirconia (YSZ) layers. We investigated the dependences of crystallization on the Y content and cleaning solution for the YSZ layers. Transmission electron microscopy showed that some regions of the Si film deposited at 430 °C were directly crystallized on a YSZ layer without an amorphous region, where Si lattice fringes were tightly connected to YSZ lattice fringes. The crystallization of Si films on YSZ layers occurred at deposition temperatures lower than that on glass substrates by more than 100 °C. Zr, Y, and F concentrations in the Si film were negligible, except the Zr concentration near the interface. The discussion on the crystallization mechanism gave the following suggestions on the method of obtaining a high crystalline fraction. The YSZ layer should be chemically cleaned using a solution containing HF before Si film deposition, and the content ratio Y/(Zr+Y) of YSZ should be ≳ 0.2. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2010 The Japan Society of Applied Physics. Susumu Horita and Sukreen Hana, Japanese Journal of Applied Physics, 49(10), 2010, 105801-1-105801-11. http://jjap.jsap.jp/link?JJAP/49/105801/ |
| URI: | http://hdl.handle.net/10119/9218 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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| 10JJAP-YSZ-Si.pdf | | 722Kb | Adobe PDF | 見る/開く |
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