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c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/9600
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| タイトル: | Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO_2)_<1-x>(Y_2O_3)_x Buffer Layer |
| 著者: | Horita, Susumu
Aikawa, Mami
Naruse, Tetsuya |
| キーワード: | PZT
YSZ
Si
heteroepitaxy
sputtering
monoclinic |
| 発行日: | 2000 |
| 出版者: | The Japan Society of Applied Physics |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 39 |
| 開始ページ: | 4860 |
| 終了ページ: | 4868 |
| DOI: | 10.1143/JJAP.39.4860 |
| 抄録: | We investigated the crystalline and electrical properties of heteroepitaxial lead zirconate titanate (PZT) films grown on Si covered with epitaxial (100) (ZrO_2)_<1-x>(Y_2O_3)_x (YSZ) buffer layers. The PZT films were prepared by reactive sputtering. When the substrate temperature was between 400 and 485°C, we obtained a heteroepitaxial (110) oriented monoclinic PZT (m-PZT) film which was metastable. The lattice parameters were as follows: a=b=0.379 nm, c= 0.521 nm and γ=81.3°. The m-PZT film had a larger oxygen composition ratio O/(Zr+Ti) of 3.2 to 3.8 than the perovskite phase. Although the resistivity of the as-grown m-PZT film was much lower than that of the normal perovskite phase, it was increased by two to five orders of magnitude by a step-annealing process of 300°C for 120 min, 325°C for 120 min and 350°C for 180 min in sequence. From the C?V characteristics of the step-annealed m-PZT/YSZ/Si structure, the relative dielectric constant was estimated to be about 45. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2000 The Japan Society of Applied Physics. |
| URI: | http://hdl.handle.net/10119/9600 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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