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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9600

Title: Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO_2)_<1-x>(Y_2O_3)_x Buffer Layer
Authors: Horita, Susumu
Aikawa, Mami
Naruse, Tetsuya
Keywords: PZT
Issue Date: 2000
Publisher: The Japan Society of Applied Physics
Magazine name: Japanese Journal of Applied Physics
Volume: 39
Start page: 4860
End page: 4868
DOI: 10.1143/JJAP.39.4860
Abstract: We investigated the crystalline and electrical properties of heteroepitaxial lead zirconate titanate (PZT) films grown on Si covered with epitaxial (100) (ZrO_2)_<1-x>(Y_2O_3)_x (YSZ) buffer layers. The PZT films were prepared by reactive sputtering. When the substrate temperature was between 400 and 485°C, we obtained a heteroepitaxial (110) oriented monoclinic PZT (m-PZT) film which was metastable. The lattice parameters were as follows: a=b=0.379 nm, c= 0.521 nm and γ=81.3°. The m-PZT film had a larger oxygen composition ratio O/(Zr+Ti) of 3.2 to 3.8 than the perovskite phase. Although the resistivity of the as-grown m-PZT film was much lower than that of the normal perovskite phase, it was increased by two to five orders of magnitude by a step-annealing process of 300°C for 120 min, 325°C for 120 min and 350°C for 180 min in sequence. From the C?V characteristics of the step-annealed m-PZT/YSZ/Si structure, the relative dielectric constant was estimated to be about 45.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2000 The Japan Society of Applied Physics.
URI: http://hdl.handle.net/10119/9600
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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