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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9896

Title: Totally solution-processed ferroelectric-gate thin-film transistor
Authors: Miyasako, Takaaki
Trinh, Bui Nguyen Quoc
Onoue, Masatoshi
Kaneda, Toshihiko
Tue, Phan Trong
Tokumitsu, Eisuke
Shimoda, Tatsuya
Issue Date: 2010-10-29
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 97
Number: 17
Start page: 173509-1
End page: 173509-3
DOI: 10.1063/1.3508958
Abstract: We have fabricated inorganic ferroelectric-gate thin film transistors (FGTs) using only a chemical solution deposition (CSD) process. All layers, including the channel [indium-tin-oxide (ITO)], ferroelectric-gate insulator [Pb(Zr,Ti)O_3], gate electrode (LaNiO_3) and source/drain electrodes (ITO), were formed by the CSD process. The fabricated FGT exhibited typical n-channel transistor operation with good saturation in drain current and drain voltage (I_D-V_D) characteristics. The obtained on/off current ratio, memory window, and subthreshold voltage swing were about 10^7, 2.5 V, and 420 mV/decade, respectively.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, and Tatsuya Shimoda, Applied Physics Letters, 97(17), 173509 (2010) and may be found at http://link.aip.org/link/doi/10.1063/1.3508958
URI: http://hdl.handle.net/10119/9896
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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