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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9897

Title: A low-temperature crystallization path for device-quality ferroelectric film
Authors: Li, Jinwang
Kameda, Hiroyuki
Trinh, Bui Nguyen Quoc
Miyasako, Takaaki
Tue, Phan Trong
Tokumitsu, Eisuke
Mitani, Tadaoki
Shimoda, Tatsuya
Issue Date: 2010-09-10
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 97
Number: 10
Start page: 102905-1
End page: 102905-3
DOI: 10.1063/1.3486462
Abstract: We show a path for low-temperature crystallization of device-quality solution-processed lead zirconate titanate films. The essential aspect of the path is to circumvent pyrochlore formation at around 300 ℃ during temperature increase up to 400  ℃. By maintaining enough carbon via pyrolysis at 210  ℃, well below the temperature for pyrochlore formation, Pb^<2+> can be reduced to Pb^0. This leads to the lack of Pb^<2+> in the film to suppress the development of pyrochlore, which accounts for the usual high-temperature conversion to perovskite. Films on metal, metal/oxide hybrid, and oxide bottom electrodes were successfully crystallized at 400–450  ℃.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Jinwang Li, Hiroyuki Kameda, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tadaoki Mitani, and Tatsuya Shimoda, Applied Physics Letters, 97(10), 102905 (2010) and may be found at http://link.aip.org/link/doi/10.1063/1.3486462
URI: http://hdl.handle.net/10119/9897
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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