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https://hdl.handle.net/10119/10271
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| Title: | Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N_2 carrier gas |
| Authors: | Akabori, M.
Sladek, K.
Hardtdegen, H.
Schäpers, Th.
Grützmacher, D. |
| Keywords: | Nanostructures
Metalorganic vapor phase epitaxy
Selective epitaxy
Nanomaterials
Semiconducting III-V materials |
| Issue Date: | 2009 |
| Publisher: | Elsevier |
| Magazine name: | Journal of Crystal Growth |
| Volume: | 311 |
| Number: | 15 |
| Start page: | 3813 |
| End page: | 3816 |
| DOI: | 10.1016/j.jcrysgro.2009.06.015 |
| Abstract: | The influence of temperature on selective area (SA) InAs nanowire growth was investigated formetal-organic vapor phase epitaxy (MOVPE) using N_2 as the carrier gas and (111)B GaAs substrates.In contrast to the growth temperature range – below 600°C – reported for hydrogen ambient, theoptimal growth temperature – between 650° and 700°C was 100K higher than the optimal ones for H_2 carrier gas. At these temperatures nanowires with aspect ratios of about 80 and a symmetric hexagonal shape were obtained. The results found are attributed to the physical and chemical properties of the carrier gas. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. M. Akabori, K. Sladek, H. Hardtdegen, Th. Schäpers and D. Grützmacher, Journal of Crystal Growth, 311(15), 2009, 3813-3816, http://dx.doi.org/10.1016/j.jcrysgro.2009.06.015 |
| URI: | https://hdl.handle.net/10119/10271 |
| Material Type: | author |
| Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
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