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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10271

Title: Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N_2 carrier gas
Authors: Akabori, M.
Sladek, K.
Hardtdegen, H.
Schäpers, Th.
Grützmacher, D.
Keywords: Nanostructures
Metalorganic vapor phase epitaxy
Selective epitaxy
Semiconducting III-V materials
Issue Date: 2009
Publisher: Elsevier
Magazine name: Journal of Crystal Growth
Volume: 311
Number: 15
Start page: 3813
End page: 3816
DOI: 10.1016/j.jcrysgro.2009.06.015
Abstract: The influence of temperature on selective area (SA) InAs nanowire growth was investigated formetal-organic vapor phase epitaxy (MOVPE) using N_2 as the carrier gas and (111)B GaAs substrates.In contrast to the growth temperature range – below 600°C – reported for hydrogen ambient, theoptimal growth temperature – between 650° and 700°C was 100K higher than the optimal ones for H_2 carrier gas. At these temperatures nanowires with aspect ratios of about 80 and a symmetric hexagonal shape were obtained. The results found are attributed to the physical and chemical properties of the carrier gas.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. M. Akabori, K. Sladek, H. Hardtdegen, Th. Schäpers and D. Grützmacher, Journal of Crystal Growth, 311(15), 2009, 3813-3816, http://dx.doi.org/10.1016/j.jcrysgro.2009.06.015
URI: http://hdl.handle.net/10119/10271
Material Type: author
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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