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Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas
Weak frequency dispersion of C-V characteristics of AlGaN/GaN metal-insulator-semiconductor devices despite high interface trap density
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures
Electron mobility enhancement in n-GaN under Ohmic-metal
Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals
