JAIST Repository > g. ナノマテリアルテクノロジーセンター > g10. 学術雑誌論文等 >
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures
Electron mobility enhancement in n-GaN under Ohmic-metal
Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals
Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices
Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering
