JAIST Repository > f. ナノマテリアルテクノロジーセンター > f10. 学術雑誌論文等 >
Characterization of spin-orbit coupling in gated wire structures using Al_2O_3/In_0.75Ga_0.25As/In_0.75Al_0.25As inverted heterojunctions
Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates
Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices
Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices
Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping
