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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/10272
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タイトル: | Strain-enhanced electron mobility anisotropy in In_xGa_<1-x> As/InP two-dimensional electron gases |
著者: | Akabori, Masashi Trinh, Thanh Quang Kudo, Masahiro Hardtdegen, Hilde Schäpers, Thomas Suzuki, Toshi-kazu |
キーワード: | InGaAs/InP Two-dimensional electron gases (2DEGs) Strained quantum wells (QWs) Electron mobility anisotropy Random piezoelectric (PE) scattering |
発行日: | 2010 |
出版者: | Elsevier |
誌名: | Physica E: Low-dimensional Systems and Nanostructures |
巻: | 42 |
号: | 4 |
開始ページ: | 1130 |
終了ページ: | 1133 |
DOI: | 10.1016/j.physe.2009.11.039 |
抄録: | We systematically investigated electron mobility anisotropy in compressively-strained, lattice-matched, and tensilely-strained InGaAs quantum wells (QWs) grown on InP(001) by using Hall-bar devices with various current-flowing directions. Anisotropy of electron mobility, the highest along [1-10] direction and the lowest along [110], is systematically observed in all QWs, and well-fitted with a sinusoidal function of the current-flowing direction angle. The mobility anisotropy is minimum in the lattice-matched case and enhanced by both compressive and tensile strains in the QWs. We consider that random piezoelectric scattering, which is enhanced by the average normal strain in the QW, has anisotropy and plays an important role for the observed results. |
Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Masashi Akabori, Thanh Quang Trinh, Masahiro Kudo, Hilde Hardtdegen, Thomas Schäpers, Toshi-kazu Suzuki, Physica E: Low-dimensional Systems and Nanostructures, 42(4), 2010, 1130-1133, http://dx.doi.org/10.1016/j.physe.2009.11.039 |
URI: | http://hdl.handle.net/10119/10272 |
資料タイプ: | author |
出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
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