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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10272

Title: Strain-enhanced electron mobility anisotropy in In_xGa_<1-x> As/InP two-dimensional electron gases
Authors: Akabori, Masashi
Trinh, Thanh Quang
Kudo, Masahiro
Hardtdegen, Hilde
Schäpers, Thomas
Suzuki, Toshi-kazu
Keywords: InGaAs/InP
Two-dimensional electron gases (2DEGs)
Strained quantum wells (QWs)
Electron mobility anisotropy
Random piezoelectric (PE) scattering
Issue Date: 2010
Publisher: Elsevier
Magazine name: Physica E: Low-dimensional Systems and Nanostructures
Volume: 42
Number: 4
Start page: 1130
End page: 1133
DOI: 10.1016/j.physe.2009.11.039
Abstract: We systematically investigated electron mobility anisotropy in compressively-strained, lattice-matched, and tensilely-strained InGaAs quantum wells (QWs) grown on InP(001) by using Hall-bar devices with various current-flowing directions. Anisotropy of electron mobility, the highest along [1-10] direction and the lowest along [110], is systematically observed in all QWs, and well-fitted with a sinusoidal function of the current-flowing direction angle. The mobility anisotropy is minimum in the lattice-matched case and enhanced by both compressive and tensile strains in the QWs. We consider that random piezoelectric scattering, which is enhanced by the average normal strain in the QW, has anisotropy and plays an important role for the observed results.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Masashi Akabori, Thanh Quang Trinh, Masahiro Kudo, Hilde Hardtdegen, Thomas Schäpers, Toshi-kazu Suzuki, Physica E: Low-dimensional Systems and Nanostructures, 42(4), 2010, 1130-1133, http://dx.doi.org/10.1016/j.physe.2009.11.039
URI: http://hdl.handle.net/10119/10272
Material Type: author
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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