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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/10835
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| タイトル: | Experimental evidence for epitaxial silicene on diboride thin films |
| 著者: | Fleurence, Antoine
Friedlein, Rainer
Ozaki, Taisuke
Kawai, Hiroyuki
Wang, Ying
Yamada-Takamura, Yukiko |
| キーワード: | Epitaxial Silicene
electronic properties of silicene
scanning tunneling microscopy |
| 発行日: | 2012-06-11 |
| 出版者: | American Physical Society |
| 誌名: | Physical Review Letters |
| 巻: | 108 |
| 号: | 24 |
| 開始ページ: | 245501-1 |
| 終了ページ: | 245501-5 |
| DOI: | 10.1103/PhysRevLett.108.245501 |
| 抄録: | As the Si counterpart of graphene, silicene may be defined as an at least partially sp^2-hybridized, atom-thick honeycomb layer of Si that possesses π-electronic bands. Here we show that two-dimensional, epitaxial silicene forms through surface segregation on zirconium diboride thin films grown on Si wafers. A particular buckling of silicene induced by the epitaxial relationship with the diboride surface leads to a direct π-electronic band gap at the Γ point. These results demonstrate that the buckling and thus the electronic properties of silicene are modified by epitaxial strain. |
| Rights: | Published by the American Physical Society under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. Antoine Fleurence, Rainer Friedlein, Taisuke Ozaki, Hiroyuki Kawai, Ying Wang, and Yukiko Yamada-Takamura, Physical Review Letters, 108(24), 2012, 245501. http://dx.doi.org/10.1103/PhysRevLett.108.245501 |
| URI: | http://hdl.handle.net/10119/10835 |
| 資料タイプ: | publisher |
| 出現コレクション: | z10-10-1. 雑誌掲載論文 (Journal Articles)
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