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Takamura Yukiko

No.Bibliographical information
1 エピタキシャルシリセンの界面制御 / 高村, 由起子, 科学研究費助成事業研究成果報告書, pp.1-6, 2018-06-19
2 Single-particle excitation of core states in epitaxial silicene / Lee, Chi-Cheng, Yoshinobu, Jun, Mukai, Kozo, Yoshimoto, Shinya, Ueda, Hiroaki, Friedlein, Rainer, Fleurence, Antoine, Yamada-Takamura, Yukiko, Ozaki, Taisuke, Physical Review B, 95(11), pp.115437-1-115437-7, 2017-03-28, American Physical Society
3 Insights into the spontaneous formation of silicene sheet on diboride thin films / Fleurence, A., Yamada-Takamura, Y., Applied Physics Letters, 110(4), pp.041601-1-041601-4, 2017-01-23, American Institute of Physics
4 Single-domain epitaxial silicene on diboride thin films / Fleurence, Antoine, Gill, T. G., Friedlein, R., Sadowski, J. T., Aoyagi, K., Copel, M., Tromp, R. M., Hirjibehedin, C. F., Takamura, Yukiko, Applied Physics Letters, 108(15), pp.151902-1-151902-5, 2016-04-12, American Institute of Physics
5 A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB_2 / Wiggers, F. B., Bui, H. Van, Friedlein, R., Yamada-Takamura,Y., Schmitz, J., Kovalgin, A. Y., de Jong, M. P., The Journal of Chemical Physics, 144(13), pp.134703-1-134703-5, 2016-04-05, American Institute of Physics
6 On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process / Bui, H. Van, Wiggers, F. B., Friedlein, R., Yamada-Takamura, Y., Kovalgin, A. Y., Jong, M. P. de, The Journal of Chemical Physics, 142(6), pp.064702-1-064702-5, 2015-02-09, American Institute of Physics
7 Competing magnetism in π-electrons in graphene with a single carbon vacancy / Lee, Chi-Cheng, Yamada-Takamura, Yukiko, Ozaki, Taisuke, Physical Review B, 90(1), pp.014401-1-014401-5, 2014-7-01, American Physical Society
8 Progress in the materials science of silicene / Yamada-Takamura, Yukiko, Friedlein, Rainer, Science and Technology of Advanced Materials, 15(6), pp.064404-, 2014-12-11, IOP Publishing
9 Avoiding critical-point phonon instabilities in two-dimensional materials: The origin of the stripe formation in epitaxial silicene / Lee, Chi-Cheng, Fleurence, Antoine, Friedlein, Rainer, Yamada-Takamura, Yukiko, Ozaki, Taisuke, Physical Review B, 90(24), pp.241402-1-241402-5, 2014-12-01, American Physical Society
10 Diverse forms of bonding in two-dimensional Si allotropes: Nematic orbitals in the MoS_2 structure / Gimbert, Florian, Lee, Chi-Cheng, Friedlein, Rainer, Fleurence, Antoine, Yamada-Takamura, Yukiko, Ozaki, Taisuke, Physical Review B, 90(16), pp.165423-1-165423-5, 2014-10-17, American Physical Society
11 Band structure of silicene on zirconium diboride (0001) thin-film surface: Convergence of experiment and calculations in the one-Si-atom Brillouin zone / Lee, Chi-Cheng, Fleurence, Antoine, Yamada-Takamura, Yukiko, Ozaki, Taisuke, Friedlein, Rainer, Physical Review B, 90(7), pp.075422-1-075422-7, 2014-08-22, American Physical Society
12 Interaction of epitaxial silicene with overlayers formed by exposure to Al atoms and O_2 molecules / Friedlein, R., Bui, H. Van, Wiggers, F. B., Yamada-Takamura, Y., Kovalgin, A. Y., Jong, M. P. de, Journal of Chemical Physics, 140(20), pp.204705-1-204705-4, 2014-05-27, American Institute of Physics
13 Core level excitations - a fingerprint of structural and electronic properties of epitaxial silicene / Friedlein, R., Fleurence, A., Aoyagi, K., Jong, M. P. de, Bui, H. Van, Wiggers, F. B., Yoshimoto, S., Koitaya, T., Shimizu, S., H. Noritake, Mukai, K., Yoshinobu, J., Yamada-Takamura, Y., Journal of Chemical Physics, 140(18), pp.184704-1-184704-6, 2014-05-12, American Institute of Physics
14 Microscopic origin of the π states in epitaxial silicene / Fleurence, A., Yoshida, Y., Lee, C.-C., Ozaki, T., Yamada-Takamura, Y., Hasegawa, Y., Applied Physics Letters, 104(2), pp.021605-1-021605-4, 2014-01-16, American Institute of Physics
15 First-principles study on competing phases of silicene: Effect of substrate and strain / Lee, Chi-Cheng, Fleurence, Antoine, Friedlein, Rainer, Yamada-Takamura, Yukiko, Ozaki, Taisuke, Physical Review B, 88(16), pp.165404-1-165404-10, 2013-10-04, American Physical Society
16 Tuning of silicene-substrate interactions with potassium adsorption / Friedlein, R., Fleurence, A., Sadowski, J. T., Yamada-Takamura, Y., Applied Physics Letters, 102(22), pp.221603-1-221603-4, 2013-06-05, American Institute of Physics
17 Molecular order, charge injection efficiency and the role of intermolecular polar bonds at organic/organic heterointerfaces / Wang, Y., Matsushima, T., Murata, H., Fleurence, A., Yamada-Takamura, Y., Friedlein, R., Organic Electronics, 13(10), pp.1853-1858, 2012-06-13, Elsevier
18 Experimental evidence for epitaxial silicene on diboride thin films / Fleurence, Antoine, Friedlein, Rainer, Ozaki, Taisuke, Kawai, Hiroyuki, Wang, Ying, Yamada-Takamura, Yukiko, Physical Review Letters, 108(24), pp.245501-1-245501-5, 2012-06-11, American Physical Society
19 Structure-dependent band dispersion in epitaxial anthracene films / Bussolotti, F., Yamada-Takamura, Y., Wang, Y., Friedlein, R., Journal of Chemical Physics, 135(12), pp.124709-1-124709-4, 2011-09-29, American Institute of Physics
20 Surface electronic structure of ZrB_2 buffer layers for GaN growth on Si wafers / Yamada-Takamura, Yukiko, Bussolotti, Fabio, Fleurence, Antoine, Bera, Sambhunath, Friedlein, Raine, Applied Physics Letters, 97(7), pp.073109-1-073109-3, 2010-08-18, American Institute of Physics
21 ホウ化物薄膜のエピタキシャル成長における表面・界面制御 / 高村, 由起子, 科学研究費補助金研究成果報告書, pp.1-5, 2010-06-17
22 Intermolecular band dispersions in single-crystalline anthracene multilayer films / Bussolotti, F., Yamada-Takamura, Y., Friedlein, R., Physical Review B, 80(15), pp.153402-1-153402-4, 2009-10-1, American Physical Society
23 Growth of single-crystalline zirconium diboride thin film on sapphire / Bera, Sambhunath, Sumiyoshi, Yuichiro, Yamada-Takamura, Yukiko, Journal of Applied Physics, 106(6), pp.063531-1-063531-3, 2009-09-25, American Institute of Physics
24 Silicon on insulator for symmetry-converted growth / Fujikawa, Y., Yamada-Takamura, Y., Yoshikawa, G., Ono, T., Esashi, M., Zhang, P. P., Lagally, M. G., Sakurai, T., Applied Physics Letters, 90(24), pp.243107-, 2007-06-11, American Institute of Physics
25 窒化物半導体薄膜の走査プローブ顕微鏡による微視的評価 / 高村(山田), 由起子, 王, 治涛, 藤川, 安仁, 櫻井, 利夫, 応用物理, 76(5), pp.499-504, 2007, 応用物理学会
26 Effect of nitridation on the growth of GaN on ZrB_2(0001)/Si(111) by molecular beam epitaxy / Wang, Zhi-Tao, Yamada-Takamura, Y., Fujikawa, Y., Sakurai, T., Xue, Q. K., Journal of Applied Physics, 100(3), pp.033506-1-033506-5, 2006-08-02, American Institute of Physics
27 エピタキシャルZrB_2薄膜を介在したシリコン基板における単一極性GaN薄膜の成長 / 高村(山田), 由起子, 王, 治涛, 藤川, 安仁, 櫻井, 利夫, 日本物理学会誌, 61(7), pp.521-524, 2006-07-05, 日本物理学会
28 Atomistic study of GaN surface grown on Si(111) / Wang, Z. T., Yamada-Takamura, Y., Fujikawa, Y., Sakurai, T., Xue, Q. K., Applied Physics Letters, 87(3), pp.032110-1-032110-3, 2005-07-18, American Institute of Physics
29 Hydrogen permeation barrier performance characterization of vapor deposited amorphous aluminum oxide films using coloration of tungsten oxide / Yamada-Takamura, Y., Koch, F., Maier, H., Bolt, H., Surface and Coatings Technology, 153(2-3), pp.114-118, 2002-04-15, Elsevier
30 Characterization of α-phase aluminum oxide films deposited by filtered vacuum arc / Yamada-Takamura, Y., Koch, F., Maier, H., Bolt, H., Surface and Coatings Technology, 142-144, pp.260-264, 2001-07, Elsevier
31 Microstructure and nanomechanical properties of cubic boron nitride films prepared by bias sputter deposition / Yamada, Yukiko, Tsuda, Osamu, Yoshida, Toyonobu, Thin Solid Films, 316(1-2), pp.35-39, 1998-03-21, Elsevier
32 Growth process of cubic boron nitride films in bias sputter deposition / Yamada, Yukiko, Tatebayashi, Yoshinao, Tsuda, Osamu, Yoshida, Toyonobu, Thin Solid Films, 295(1-2), pp.137-141, 1997-02-28, Elsevier

 


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