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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10862

Title: Highly conductive p-type amorphous oxides from low-temperature solution Processing
Authors: Li, Jinwang
Tokumitsu, Eisuke
Koyano, Mikio
Mitani, Tadaoki
Shimoda, Tatsuya
Keywords: p-type oxide
amorphous oxide
conductive oxide
solution process
low-temperature process
Issue Date: 2012-09-26
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 101
Number: 13
Start page: 132104-1
End page: 132104-4
DOI: 10.1063/1.4754608
Abstract: We report solution-processed, highly conductive (resistivity 1.3–3.8 mΩ cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 °C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E_<VBM> = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.
Rights: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Jinwang Li, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, Tatsuya Shimoda, Applied Physics Letters, 101(13), 132104 (2012) and may be found at http://dx.doi.org/10.1063/1.4754608
URI: http://hdl.handle.net/10119/10862
Material Type: publisher
Appears in Collections:z8-10-1. 雑誌掲載論文 (Journal Articles)

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