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タイトル: Highly conductive p-type amorphous oxides from low-temperature solution Processing
著者: Li, Jinwang
Tokumitsu, Eisuke
Koyano, Mikio
Mitani, Tadaoki
Shimoda, Tatsuya
キーワード: p-type oxide
amorphous oxide
conductive oxide
solution process
low-temperature process
発行日: 2012-09-26
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 101
号: 13
開始ページ: 132104-1
終了ページ: 132104-4
DOI: 10.1063/1.4754608
抄録: We report solution-processed, highly conductive (resistivity 1.3–3.8 mΩ cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 °C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E_<VBM> = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.
Rights: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Jinwang Li, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, Tatsuya Shimoda, Applied Physics Letters, 101(13), 132104 (2012) and may be found at http://dx.doi.org/10.1063/1.4754608
URI: http://hdl.handle.net/10119/10862
資料タイプ: publisher
出現コレクション:z8-10-1. 雑誌掲載論文 (Journal Articles)


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