|
JAIST Repository >
グリーンデバイス研究センター 2011～2016 >
z8-10. 学術雑誌論文等 >
z8-10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/10862
|
| タイトル: | Highly conductive p-type amorphous oxides from low-temperature solution Processing |
| 著者: | Li, Jinwang
Tokumitsu, Eisuke
Koyano, Mikio
Mitani, Tadaoki
Shimoda, Tatsuya |
| キーワード: | p-type oxide
amorphous oxide
conductive oxide
solution process
low-temperature process |
| 発行日: | 2012-09-26 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 101 |
| 号: | 13 |
| 開始ページ: | 132104-1 |
| 終了ページ: | 132104-4 |
| DOI: | 10.1063/1.4754608 |
| 抄録: | We report solution-processed, highly conductive (resistivity 1.3–3.8 mΩ cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 °C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E_<VBM> = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K. |
| Rights: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Jinwang Li, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, Tatsuya Shimoda, Applied Physics Letters, 101(13), 132104 (2012) and may be found at http://dx.doi.org/10.1063/1.4754608 |
| URI: | http://hdl.handle.net/10119/10862 |
| 資料タイプ: | publisher |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
| ファイル |
記述 |
サイズ | 形式 |
|---|
| 18590.pdf | | 1171Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|
