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Title: | Realization of In_<0.75>Ga_<0.25>As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction |
Authors: | Akabori, M. Hidaka, S Iwase, H. Yamada, S. Ekenberg, U. |
Issue Date: | 2012-12-10 |
Publisher: | American Institute of Physics |
Magazine name: | Journal of Applied Physics |
Volume: | 112 |
Number: | 11 |
Start page: | 113711-1 |
End page: | 113711-6 |
DOI: | 10.1063/1.4766749 |
Abstract: | Narrow gap InGaAs two-dimensional electron gas (2DEG) bilayer samples are fabricated and confirmed to have good electronic qualities as well as strong Rashba-type spin-orbit interactions (SOIs). The 2DEG systems are realized by molecular beam epitaxy in the form of wide quantum wells (QWs) with thicknesses t_<QW> ∼ 40–120 nm modulation doped in both the upper and lower InAlAs barriers. From the Hall measurements, the overall mobility values of μ_e ∼15m^2 /V s are found for the total sheet electron density of n_s ∼8 × 10^<11>/cm^2, although the ns is distributed asymmetrically as about 1:3 in the upper and lower 2DEGs, respectively. Careful low temperature magneto-resistance analysis gives large SO coupling constants of α ∼20 × 10^<−12> eV m as well as expected electron effective masses of m^*/m_0 ∼0.033-0.042 for each bilayer 2DEG spin sub-band. Moreover, the enhancement of α with decrease of t_<QW> is found. The corresponding self-consistent calculation, which suggests the interaction between the bilayer 2DEGs, is carried out and the origin of α enhancement is discussed. |
Rights: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. Akabori, S. Hidaka, H. Iwase, S. Yamada, and U. Ekenberg, Journal of Applied Physics, 112(11), 113711 (2012) and may be found at http://dx.doi.org/10.1063/1.4766749 |
URI: | http://hdl.handle.net/10119/11448 |
Material Type: | publisher |
Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
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