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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/11596

Title: Controllable threshold voltage of a pentacene field-effect transistor based on a double-dielectric Structure
Authors: Dao, Toan Thanh
Matsushima, Toshinori
Friedlein, Rainer
Murata, Hideyuki
Keywords: Fullerene transistor
Nonvolatile memory transistor
Floating-gate effect
Electron-trapping polymer
Issue Date: 2013-05-06
Publisher: Elsevier
Magazine name: Organic Electronics
Volume: 14
Number: 8
Start page: 2007
End page: 2013
DOI: 10.1016/j.orgel.2013.04.045
Abstract: We report for the first time organic n-type nonvolatile memory transistors based on a fullerene (C_<60>) semiconductor and an electron-trapping polymer, poly(perfluoroalkenyl vinyl ether) (CYTOP). The transistors with a Si++/SiO_2/CYTOP/C_<60>/Al structure show good n-type transistor performance with a threshold voltage (V_<th>) of 2.8 V and an electron mobility of 0.4 cm^2 V^<-1> s^<-1>. Applying gate voltages of 50 or -45 V for about 0.1 s to the devices induces the reversible shifts in their transfer characteristics, which results in a large memory window (△V_<th>) of 10 V. A memory on/off ratio of 10^5 at a small reading voltage below 5 V and a retention time greater than 10^5 s are achieved. The memory effect in the transistor is ascribed to trapped electrons at the CYTOP/SiO_2 interface. Because of the use of high-electron-mobility C_<60>, the switching voltages of our memory transistors become significantly lower than those of conventional memory transistors based on pentacene.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Toan Thanh Dao, Toshinori Matsushima, Rainer Friedlein, Hideyuki Murata, Organic Electronics, 14(8), 2013, 2007-2013, http://dx.doi.org/10.1016/j.orgel.2013.04.045
URI: http://hdl.handle.net/10119/11596
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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