JAIST Repository >
School of Knowledge Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/11624

Title: Impact of UV/O_3 treatment on solution-processed amorphous InGaZnO_4 thin-film transistors
Authors: Umeda, Kenichi
Miyasako, Takaaki
Sugiyama, Ayumu
Tanaka, Atsushi
Suzuki, Masayuki
Tokumitsu, Eisuke
Shimoda, Tatsuya
Keywords: solution-prosess
Issue Date: 2013-05-13
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 113
Number: 18
Start page: 184509-1
End page: 184509-6
DOI: 10.1063/1.4804667
Abstract: Ultraviolet–ozone (UV/O_3) treatment was adopted to the fabrication of solution-processed amorphous In–Ga–Zn–O thin-film transistors (TFTs), with metal composition of In:Ga:Zn = 1:1:1 represented by InGaZnO_4. By applying UV/O_3 treatment In–Ga–Zn–O gel films, their condensation was notably enhanced through decomposition of organic- and hydrogen-based elements, which drastically improved the quality of the amorphous InGaZnO_4 films. As a result, high TFT performance, with values of on/off ratio, 10^8; subthreshold swing, 150 mV/decade; threshold voltage, 9.2 V; and field-effect mobility, 5.1 cm^2 V^<−1> s^<−1>, was achieved.
Rights: (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. Kenichi Umeda, Takaaki Miyasako, Ayumu Sugiyama, Atsushi Tanaka, Masayuki Suzuki, Eisuke Tokumitsu, and Tatsuya Shimoda, Journal of Applied Physics, 113(18), 184509 (2013) and may be found at http://dx.doi.org/10.1063/1.4804667
URI: http://hdl.handle.net/10119/11624
Material Type: publisher
Appears in Collections:a10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
19867.pdf1998KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology