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Please use this identifier to cite or link to this item:
https://hdl.handle.net/10119/11624
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| Title: | Impact of UV/O_3 treatment on solution-processed amorphous InGaZnO_4 thin-film transistors |
| Authors: | Umeda, Kenichi
Miyasako, Takaaki
Sugiyama, Ayumu
Tanaka, Atsushi
Suzuki, Masayuki
Tokumitsu, Eisuke
Shimoda, Tatsuya |
| Keywords: | solution-prosess |
| Issue Date: | 2013-05-13 |
| Publisher: | American Institute of Physics |
| Magazine name: | Journal of Applied Physics |
| Volume: | 113 |
| Number: | 18 |
| Start page: | 184509-1 |
| End page: | 184509-6 |
| DOI: | 10.1063/1.4804667 |
| Abstract: | Ultraviolet–ozone (UV/O_3) treatment was adopted to the fabrication of solution-processed amorphous In–Ga–Zn–O thin-film transistors (TFTs), with metal composition of In:Ga:Zn = 1:1:1 represented by InGaZnO_4. By applying UV/O_3 treatment In–Ga–Zn–O gel films, their condensation was notably enhanced through decomposition of organic- and hydrogen-based elements, which drastically improved the quality of the amorphous InGaZnO_4 films. As a result, high TFT performance, with values of on/off ratio, 10^8; subthreshold swing, 150 mV/decade; threshold voltage, 9.2 V; and field-effect mobility, 5.1 cm^2 V^<−1> s^<−1>, was achieved. |
| Rights: | (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. Kenichi Umeda, Takaaki Miyasako, Ayumu Sugiyama, Atsushi Tanaka, Masayuki Suzuki, Eisuke Tokumitsu, and Tatsuya Shimoda, Journal of Applied Physics, 113(18), 184509 (2013) and may be found at http://dx.doi.org/10.1063/1.4804667 |
| URI: | https://hdl.handle.net/10119/11624 |
| Material Type: | publisher |
| Appears in Collections: | a10-1. 雑誌掲載論文 (Journal Articles)
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