JAIST Repository >
Green Devices Research Center 2011-2016 >
Conference Papers >
Conference Papers >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12159

Title: Preparation of Ruthenium Metal and Ruthenium Oxide Thin Films by a Low-Temperature Solution Process
Authors: Murakami, Yoshitaka
Tue, Phan Trong
Tsukada, Hirokazu
Li, Jinwang
Shimoda, Tatsuya
Keywords: Ru/RuO2
Thin film
Solution process
Low temperature
Issue Date: Dec-2013
Publisher: ITE and SID
Abstract: Highly conductive ruthenium metal thin films and ruthenium oxide ones were prepared by a solution process at low temperature (e.g., 6.9 × 10^<-5> Ωcm at 300°C for Ru^0). Their structure and electric properties depend on the annealing conditions. The process allowed us to fabricate ruthenium electrodes on flexible substrates.
Language: eng
URI: http://hdl.handle.net/10119/12159
Appears in Collections:z8-11-1. 会議発表論文・発表資料 (Conference Papers)

Files in This Item:

File Description SizeFormat
20106.pdf1695KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology