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http://hdl.handle.net/10119/12230
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| タイトル: | Low-Temperature All-Solution-Derived Amorphous Oxide Thin-Film Transistors |
| 著者: | Tue, Phan Trong
Li, Jinwang
Miyasako, Takaaki
Inoue, Satoshi
Shimoda, Tatsuya |
| キーワード: | chemical solution deposition
oxide thin-film transistors
transparent amorphous oxide semiconductors
low-temperature process
Zr-In–Zn–O |
| 発行日: | 2013-11-06 |
| 出版者: | Institute of Electrical and Electronics Engineers (IEEE) |
| 誌名: | IEEE Electron Device Letters |
| 巻: | 34 |
| 号: | 12 |
| 開始ページ: | 1536 |
| 終了ページ: | 1538 |
| DOI: | 10.1109/LED.2013.2287216 |
| 抄録: | We prepared thin-film transistors (TFTs) in which all the layers were fabricated using simple chemical solution-processed, vacuum-free routes, followed by thermal annealing at 400°C. A ruthenium oxide (RuO_2) film prepared via low-temperature processing was used for both gate and source/drain electrodes. Amorphous lanthanum–zirconium oxide (LZO) and zirconium–indium–zinc oxide (ZIZO) films were used as the gate insulator and channel layer, respectively, which enabled the fabrication of a TFT with the desired performance at a sufficiently low temperature. The ultraviolet-ozone (UV/O3) treatment was adopted to channel layer in order to facilitate precursor decomposition and condensation processes. As a result, the obtained “on/off” ratio, sub-threshold swing voltage, and channel mobility were approximately 6 × 10^5, 250 mV/decade, and 5.80 cm^<2>V^<−1>s^<−1>, respectively. This result contributes to the development of sustainable “completely printed inorganic electronics.” |
| Rights: | This is the author's version of the work. Copyright (C) 2013 IEEE. IEEE Electron Device Letters, 34(12), 2013, 1536-1538. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| URI: | http://hdl.handle.net/10119/12230 |
| 資料タイプ: | author |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
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