JAIST Repository >
Green Devices Research Center 2011-2016 >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12230

Title: Low-Temperature All-Solution-Derived Amorphous Oxide Thin-Film Transistors
Authors: Tue, Phan Trong
Li, Jinwang
Miyasako, Takaaki
Inoue, Satoshi
Shimoda, Tatsuya
Keywords: chemical solution deposition
oxide thin-film transistors
transparent amorphous oxide semiconductors
low-temperature process
Zr-In–Zn–O
Issue Date: 2013-11-06
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Magazine name: IEEE Electron Device Letters
Volume: 34
Number: 12
Start page: 1536
End page: 1538
DOI: 10.1109/LED.2013.2287216
Abstract: We prepared thin-film transistors (TFTs) in which all the layers were fabricated using simple chemical solution-processed, vacuum-free routes, followed by thermal annealing at 400°C. A ruthenium oxide (RuO_2) film prepared via low-temperature processing was used for both gate and source/drain electrodes. Amorphous lanthanum–zirconium oxide (LZO) and zirconium–indium–zinc oxide (ZIZO) films were used as the gate insulator and channel layer, respectively, which enabled the fabrication of a TFT with the desired performance at a sufficiently low temperature. The ultraviolet-ozone (UV/O3) treatment was adopted to channel layer in order to facilitate precursor decomposition and condensation processes. As a result, the obtained “on/off” ratio, sub-threshold swing voltage, and channel mobility were approximately 6 × 10^5, 250 mV/decade, and 5.80 cm^<2>V^<−1>s^<−1>, respectively. This result contributes to the development of sustainable “completely printed inorganic electronics.”
Rights: This is the author's version of the work. Copyright (C) 2013 IEEE. IEEE Electron Device Letters, 34(12), 2013, 1536-1538. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
URI: http://hdl.handle.net/10119/12230
Material Type: author
Appears in Collections:z8-10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
20105.pdf570KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology