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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12316

Title: High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N_2 gas field ion source
Authors: Akabori, Masashi
Hidaka, Shiro
Yamada, Syoji
Kozakai, Tomokazu
Matsuda, Osamu
Yasaka, Anto
Keywords: InGaAs
quantum point contact
gas field ion source
focused ion beam
Issue Date: 2014-10-09
Publisher: The Japan Society of Applied Physics
Magazine name: Japanese Journal of Applied Physics
Volume: 53
Number: 11
Start page: 118002-1
End page: 118002-3
DOI: 10.7567/JJAP.53.118002
Abstract: Quantum point contacts (QPCs) in high-In-content InGaAs modulation-doped heterostructures fabricated using a focused ion beam (FIB) system equipped with a N_2 gas field ion source (GFIS) are demonstrated. The minimum physical size of the fabricated QPC structures in this study is ~30 nm, which is smaller than the typical physical size of QPCs (>50 nm) obtained by electron beam lithography and etching techniques. In addition, the fabricated QPCs are characterized electrically at low temperatures with magnetic fields. Since some of them show conductance quantization behaviors, the results indicate that the GFIS-FIB process is promising for quantum device fabrication.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2014 The Japan Society of Applied Physics. Masashi Akabori, Shiro Hidaka, Syoji Yamada, Tomokazu Kozakai, Osamu Matsuda and Anto Yasaka, Japanese Journal of Applied Physics, 53(11), 2014, 118002-1-118002-3. http://dx.doi.org/10.7567/JJAP.53.118002
URI: http://hdl.handle.net/10119/12316
Material Type: author
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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