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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12321

Title: Interaction of epitaxial silicene with overlayers formed by exposure to Al atoms and O_2 molecules
Authors: Friedlein, R.
Bui, H. Van
Wiggers, F. B.
Yamada-Takamura, Y.
Kovalgin, A. Y.
Jong, M. P. de
Keywords: silicene
capping layer
aluminum oxide
Issue Date: 2014-05-27
Publisher: American Institute of Physics
Magazine name: Journal of Chemical Physics
Volume: 140
Number: 20
Start page: 204705-1
End page: 204705-4
DOI: 10.1063/1.4878375
Abstract: As silicene is not chemically inert, the study and exploitation of its electronic properties outside of ultrahigh vacuum environments require the use of insulating capping layers. In order to understand if aluminum oxide might be a suitable encapsulation material, we used high-resolution synchrotron photoelectron spectroscopy to study the interactions of Al atoms and O_2 molecules, as well as the combination of both, with epitaxial silicene on thin ZrB_2(0001) films grown on Si(111). The deposition of Al atoms onto silicene, up to the coverage of about 0.4 Al per Si atoms, has little effect on the chemical state of the Si atoms. The silicene-terminated surface is also hardly affected by exposure to O_2 gas, up to a dose of 4500 L. In contrast, when Al-covered silicene is exposed to the same dose, a large fraction of the Si atoms becomes oxidized. This is attributed to dissociative chemisorption of O_2 molecules by Al atoms at the surface, producing reactive atomic oxygen species that cause the oxidation. It is concluded that aluminum oxide overlayers prepared in this fashion are not suitable for encapsulation since they do not prevent but actually enhance the degradation of silicene.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in R. Friedlein, H. Van Bui, F. B. Wiggers, Y. Yamada-Takamura, A. Y. Kovalgin, and M. P. de Jong, Journal of Chemical Physics, 140(20), 204705 (2014) and may be found at http://dx.doi.org/10.1063/1.4878375
URI: http://hdl.handle.net/10119/12321
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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