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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12322

Title: Microscopic origin of the π states in epitaxial silicene
Authors: Fleurence, A.
Yoshida, Y.
Lee, C.-C.
Ozaki, T.
Yamada-Takamura, Y.
Hasegawa, Y.
Keywords: silicene
STM
STS
low temperature
Issue Date: 2014-01-16
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 104
Number: 2
Start page: 021605-1
End page: 021605-4
DOI: 10.1063/1.4862261
Abstract: We investigated the electronic properties of epitaxial silicene on ZrB_2(0001) thin film grown on Si(111) by means of low-temperature scanning tunneling spectroscopy and density functional theory calculations. The position of silicon atoms and thus, the localization of the valence and conduction states were deducted from the comparison of the spectra and the computed local density of states. We point out the strong contribution of p_z orbitals of specific atoms to those states which indicates the π character of the conduction and valence bands. A clear correlation between hybridization of the orbitals of the Si atoms and the buckling was evidenced.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in A. Fleurence, Y. Yoshida, C.-C. Lee, T. Ozaki, Y. Yamada-Takamura, and Y. Hasegawa, Applied Physics Letters, 104(2), 021605 (2014) and may be found at http://dx.doi.org/10.1063/1.4862261
URI: http://hdl.handle.net/10119/12322
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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