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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/12322
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| タイトル: | Microscopic origin of the π states in epitaxial silicene |
| 著者: | Fleurence, A.
Yoshida, Y.
Lee, C.-C.
Ozaki, T.
Yamada-Takamura, Y.
Hasegawa, Y. |
| キーワード: | silicene
STM
STS
low temperature |
| 発行日: | 2014-01-16 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 104 |
| 号: | 2 |
| 開始ページ: | 021605-1 |
| 終了ページ: | 021605-4 |
| DOI: | 10.1063/1.4862261 |
| 抄録: | We investigated the electronic properties of epitaxial silicene on ZrB_2(0001) thin film grown on Si(111) by means of low-temperature scanning tunneling spectroscopy and density functional theory calculations. The position of silicon atoms and thus, the localization of the valence and conduction states were deducted from the comparison of the spectra and the computed local density of states. We point out the strong contribution of p_z orbitals of specific atoms to those states which indicates the π character of the conduction and valence bands. A clear correlation between hybridization of the orbitals of the Si atoms and the buckling was evidenced. |
| Rights: | Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in A. Fleurence, Y. Yoshida, C.-C. Lee, T. Ozaki, Y. Yamada-Takamura, and Y. Hasegawa, Applied Physics Letters, 104(2), 021605 (2014) and may be found at http://dx.doi.org/10.1063/1.4862261 |
| URI: | http://hdl.handle.net/10119/12322 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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