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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12834

Title: 巨大電界効果を利用した可変面積電極の提案と可変容量キャパシタへの展開
Other Titles: Proposal of varialbe-area electrode structure by field effect and its application to variable capacitors
Authors: 徳光, 永輔
Authors(alternative): Tokumitsu, Eisuke
Keywords: 薄膜トランジスタ
可変容量キャパシタ
強誘電体
高誘電率材料
酸化物半導体
Issue Date: 2-Jun-2015
Abstract: 本研究の目的は、大きな電荷密度を誘起できる強誘電体または高誘電率材料を用いて、面積を可変できる酸化物伝導体の電極構造を提案し、これを利用して集積化可能な小型・高性能の可変容量キャパシタを実現することである。本研究では、まず提案する素子を実現するための強誘電体(Bi,La)4Ti3O12(BLT)膜形成条件の最適化と溶液プロセスによる高誘電率材料の探索を実施した。次にITOまたはIn2O3をチャネルに用いた薄膜トランジスタ型の素子を試作して動作検証を行い、約1500%のゲート電圧による容量変化を実現した。さらに素子のスイッチング特性の改善およびナノインプリントを用いた素子の微細化を実施した。 : Objective of this research is to develop a new variable capacitance element, using oxide conductors and ferroelectric or high-dielectric constant materials which can induce large charge density. Such a large charge density enables us to switch on and off the oxide conducting thin film by the gate voltage, which leads to variable-area electrode and variable capacitance. In this project, at first, fabrication conditions of ferroelectric (Bi,La)4Ti3O12 (BLT) film were optimized and new high-dielectric constant materials were searched by solution process. Next, thin film transistor structure was fabricated using ITO or In2O3 channel to realize variable capacitance elements. It is confirmed that the source-gate capacitance can be changed by the gate voltage with a capacitance ratio of 1500%. Switching properties were also characterized. In addition, scaling down the device size was achieved using nanoimprint technology.
Description: 研究種目:基盤研究(B)
研究期間:2012~2014
課題番号:24360119
研究者番号:10197882
研究分野:固体電子工学
Language: jpn
URI: http://hdl.handle.net/10119/12834
Appears in Collections:平成26年度 (FY 2014)

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