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http://hdl.handle.net/10119/12901
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タイトル: | Electron distribution and scattering in InAs films on low-k flexible substrates |
著者: | Nguyen, Cong Thanh Shih, Hong-An Akabori, Masashi Suzuki, Toshi-kazu |
発行日: | 2012-06-05 |
出版者: | American Institute of Physics |
誌名: | Applied Physics Letters |
巻: | 100 |
号: | 23 |
開始ページ: | 232103-1 |
終了ページ: | 232103-4 |
DOI: | 10.1063/1.4722798 |
抄録: | On low-k flexible substrates, we obtained InAs films with thickness ranging from several hundreds of nm to sub-10-nm, by epitaxial lift-off and van der Waals bonding. Using Hall measurements, we investigated the electron mobility and sheet concentration depending on the InAs film thickness L. In spite of the undoped InAs films, we do not observe electron depletion even for sub-10-nm thickness L, owing to the Fermi level pinning above the conduction band bottom. We observed three regimes of the behavior of the electron mobility μ with decrease in L: almost constant or slightly increasing μ with decrease in L for ≳150 nm, weakly decreasing μ for 150 nm≳L≳15 nm, and more rapidly decreasing μ proportional to L^γ with γ≃ 5–6 for L≲15 nm. By using Poisson-Schrödinger calculation, we examined the electron distribution in the film depending on L and the associated scattering mechanisms contributing to the behavior of μ, such as phonon, Coulomb, and thickness fluctuation scattering. |
Rights: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Cong Thanh Nguyen, Hong-An Shih, Masashi Akabori and Toshi-kazu Suzuki, Applied Physics Letters, 100(23), 232103 (2012) and may be found at http://dx.doi.org/10.1063/1.4722798 |
URI: | http://hdl.handle.net/10119/12901 |
資料タイプ: | publisher |
出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
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