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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12901

Title: Electron distribution and scattering in InAs films on low-k flexible substrates
Authors: Nguyen, Cong Thanh
Shih, Hong-An
Akabori, Masashi
Suzuki, Toshi-kazu
Issue Date: 2012-06-05
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 100
Number: 23
Start page: 232103-1
End page: 232103-4
DOI: 10.1063/1.4722798
Abstract: On low-k flexible substrates, we obtained InAs films with thickness ranging from several hundreds of nm to sub-10-nm, by epitaxial lift-off and van der Waals bonding. Using Hall measurements, we investigated the electron mobility and sheet concentration depending on the InAs film thickness L. In spite of the undoped InAs films, we do not observe electron depletion even for sub-10-nm thickness L, owing to the Fermi level pinning above the conduction band bottom. We observed three regimes of the behavior of the electron mobility μ with decrease in L: almost constant or slightly increasing μ with decrease in L for ≳150 nm, weakly decreasing μ for 150 nm≳L≳15 nm, and more rapidly decreasing μ proportional to L^γ with γ≃ 5–6 for L≲15 nm. By using Poisson-Schrödinger calculation, we examined the electron distribution in the film depending on L and the associated scattering mechanisms contributing to the behavior of μ, such as phonon, Coulomb, and thickness fluctuation scattering.
Rights: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Cong Thanh Nguyen, Hong-An Shih, Masashi Akabori and Toshi-kazu Suzuki, Applied Physics Letters, 100(23), 232103 (2012) and may be found at http://dx.doi.org/10.1063/1.4722798
URI: http://hdl.handle.net/10119/12901
Material Type: publisher
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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